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Characterization of Epitaxial Films by X-Ray Diffraction

Published online by Cambridge University Press:  06 March 2019

Armin Segmüller
Armin Segmüller*
Affiliation:
IBM Thomas J. Watson Research Center Yorktown Heights, New York 10598
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Abstract

In this paper, the application of recently developed x-ray diffraction techniques to the characterization of thin epitaxial films will be discussed. The double-crystal diffractometer, with high resolution in the non-dispersive arrangement, enables the materials scientist to study epitaxial systems having a very small mismatch with high precision. A key part of the characterization of an epitaxial film is the determination of the strain tensor by measuring lattice spacing! in various directions The determination of strain and composition profiles in ion-implanted films, epitaxial layers and superlattices by rocking-curve analysis will also be reviewed. Grazingincidence diffraction, an emerging new technique, can be used to obtain structural details parallel to the interface on films with thicknesses ranging down to a few atomic layers. The synchroton has now become increasingly available as a powerful source of x radiation which will facilitate the application of conventional and grazing-incidence diffraction to ultra-thin films.

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Type
Research Article
Information
Advances in X-Ray Analysis , Volume 29: Thirty-Fourth Annual Conference on Applications of X-ray Analysis, August 5-9, 1985 , 1985, pp. 353 - 366
Copyright
Copyright © International Centre for Diffraction Data 1985

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References

1. Segmüller, J.A. and Murakami, M., “Characterization of thin films by x-ray diffraction”, in “Thin Films from Free Atoms and Particles”, Klabunde, K.J., Editor, Academic Press, New York, in press.Google Scholar
2. Segmüller, A., “Observation of x-ray interferences on thin films of amorphous silicon”, Thin Solid Films 1 8, 287–294 (1973).Google Scholar
3. Voisin, P., Delalande, C., Voos, M., Chang, L.L., Segmüller, A., Chang, C.A. and Esaki, L., “Light and heavy valence subband reversal in GaSb-AlSb superlattices”, Phys.Rev. B. 30, 2276–2278 (1984).Google Scholar
4. Segmüller, A., Krishna, P. and Esaki, L., ‘X-ray diffraction study of a one-dimensional GaAs-AlAs superlattice”, J. Appl. Cryst, IQ. 1-6 (1977).Google Scholar
5. Speriosu, V.S. and Vreeland, T., Jr., “X-ray rocking curve analysis of superlattices”, J. Appl. Phys. 56, 1591–1600 (1984).Google Scholar
6. Zeyfang, R., “Stresses in epitaxially growii single-crystal films: YIG. n YAG.” J. Appl. Phys. 41, 3718–3721 (1970).Google Scholar
7. Batterman, B.W. and Cole, H., “Dynamical diffraction of x rays by perfect crystals”, Rev. Mod. Phys. 36, 681–717 (1964).Google Scholar
8. Bartels, W.J. and Nijman, W., “X-ray double-crystal diffractometry of Ga1-xAlx:As epitaxial layers”, J. Cryst. Growth 44, 518–525 (1978),Google Scholar
9. Stacy, W.T. and Janssen, M.M., “X-ray Pendellösung in garnet epitaxial layers”, J. Cryst. Growth 27, 282–286 (1974).Google Scholar
10. Besser, P.J., Mee, J.E., Elkins, P.E. and Heinz, D.M., “A Stress model for heteroepitaxial magnetic oxide films grown by chemical vapor deposition”, Mat. Res. Bull. 6, 11111124 (1971).Google Scholar
11. Besser, P.J., Mee, J.E., Glass, H.L., Heinz, D.M., Austerman, S.B., Elkins, P.E., Hamilton, T.N. and Whitcomb, E.C., “Film/substrate matching requirements for bubble domain formation in CVD Garnet films”, In “Magnetism and Magnetic Materials 1971”, AIP. onf. Proc. 5, Part 1, pp. 125-125, American Institute of Physics, New York. (1972).Google Scholar
12. Klokholm, E., Matthews, J.W., May, A.F. ad as and j. Angilello, “Epitaxial strains and fracture in garnet films”, ibid. pp. 105-109.Google Scholar
13. Osbourn, G.C., “Strained-layer superlattices from lattice mismatched materials”, J. Appl. Phys. 53, 1586–1589 (1982); “Inx, Ga1-x As-lny11Ga1-y As strained-layer superlattices: A. roposal for useful, new electronic materials”, Phys. Rev. B. 27, 5126-5128 (1983).Google Scholar
14. Vook, R.W. and Witt, F., “Thermally induced strains in evaporated films”, J. Appl Phys. 36, 2169–2171 (1965);Google Scholar
14. Witt, F. and Vook, R.W., “Thermally induced strains in cubic metal films”, ibid. 39, 2773–2776 (1968).Google Scholar
15. Hornstra, J. and Bartels, W.J., “Determination of the lattice constant of epitaxial layers of III-V Compounds”, J. Cryst. Growth 44, 513–517 (1978).Google Scholar
16. Segmüller, A. and Murakami, M., “X-ray diffraction analysis of strains and stresses in thin films”, to be published in “Analytical Techniques (or Thin Films”, Treatise on Materials Science and Technology, (Tu, K.N. and Rosenberg, R., eds.), Academic Press, New York.Google Scholar
17. Hattanda, T. and Takeda, A., “Direct measurement of internal strains in liquid phase epitaxial garnet films on gadolinium gallium garnet (111) plate”, Japan J. Appl. Phys. 12, 1104–1105 (1973).Google Scholar
18. Speriosü, V.S., “Kinematieal x-ray diffraction in no nun (form crystalline films: Strain and damage distributions in ion-implanted garnets”, J. Appl. Phys. 52, 6094–6103 (1981).Google Scholar
19. Marra, W.C., Eisenberger, P. and Cho, A.Y., “X-ray total-external-reflection-Bragg diffraction: A Structural study of the GaAs-Al interface”, J. Appl. Phys. 50, 6927–6933 (1979).Google Scholar
20. Bloch, J., Heiblum, M. and Komem, Y., “Growth of molybdenum and tungsten on GaAs in a molecular beam epitaxy system”, Appl. Phys. Lett. 46, 1092–1094 (1985).Google Scholar
21. Siegrist, T., Segniuller, A., Mariette, H., and Holtzberg, F., “Epitaxial growth of CdTe and (Cd, Mn)Te films on GaAs substrates”, to be published.Google Scholar
22. Marra, W.C., Fuoss, P.H. and Eisenberger, P.E., “X-ray diffraction studies: Melting of Pb monolayers on Cu(110) surfaces”, Phys. Rev. Lett. 49, 1169–1172 (1982).Google Scholar
23. Fischer-Colbrie, A. and Bienenstock, A.I., personal communication (1985).Google Scholar
24. Heiny, P.A., Stephens, P.W., Birgeneau, R.J., Horn, P.M. and Moncton, D.E., “X-ray scattering study of the structure and freezing transition of monolayer xenon cn graphite”, Phys. Rev. B. 8, 6416–6434 (1983).Google Scholar
25. D’Amico, K.L., Moncton, D.E., Specht, E.D., Birgeneau, R.J., Nagler, S.E. and Horn, P.M., “The rotational transition of incommensurate Kr monolayers on graphite”, Phys. Rev. Lett. 53, 2250–2253 (1984).Google Scholar