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Oxide Scale Stresses in Polycrystalune Cu/Cu2O System

Published online by Cambridge University Press:  06 March 2019

N. Jayaraman and
Partha Rangaswamy
N. Jayaraman
Affiliation:
University of Cincinnati, Cincinnati, OH 45221-0012
Partha Rangaswamy
Affiliation:
LANSCE - Los Alamos National Laboratory, Los Alamos, NM
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Abstract

An x-ray diffraction (sin2ψ) method has been successfully used to measure the oxidation stresses at room temperature in annealed and electropolished samples of polycrystalline Cu coupons of different thickness’ (0.75, 1.25, and 2.25 mm thick) oxidized for 15 and 30 minutes at temperatures 700, 800, and 900° C, Oxide scale stresses are generally a result of both differential Coefficient of Thermal Expansion (CTE) and the Pilling-Bedworth Ratio (PBR). At the oxidation temperatures of this study, the oxide scale consisted of a mixture of both CuO and Cu2O. Residual stress measurements were made in the Cu2O phase. In this system, the average stresses on the free surface of the oxide (<σ11> and <σ22>) were compressive and the average stress through the thickness (<σ22>) normal to the oxide layer was found to be tensile.

Information

Type
Research Article
Information
Advances in X-Ray Analysis , Volume 39: Forty-Fourth Annual Conference on Applications of X-ray Analysis, July 31 - August 4, 1995 , 1995, pp. 421 - 432
Copyright
Copyright © International Centre for Diffraction Data 1995

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