Hostname: page-component-7b7567c8c-fvjsw Total loading time: 0 Render date: 2026-11-15T08:43:18.173Z Has data issue: false hasContentIssue false
  • English
  • Français

Precise Cell Parameters of Semiconductor Crystals and their Applications

Published online by Cambridge University Press:  06 March 2019

E. D. Pierron and
J. B. McNeely
E. D. Pierron
Affiliation:
New Enterprise Division, Monsanto Company St. Louis, Missouri 63166
J. B. McNeely
Affiliation:
New Enterprise Division, Monsanto Company St. Louis, Missouri 63166
Get access

Abstract

A precise method for detenaining unit cell dimensions of semiconductor single crystals has been developed. An accuracy of ± 0.00002 Å and a precision of ± 0.00001 Å is achieved.

The method is used to determine variations in the cell parameter of GaAs as a function of surface defects, homogeneity across and along an ingot, evaluation of epitaxial layers, effects of heat treatments and structure defects induced by oxide diffusion masks on a substrate. The application of the technique to GaAsP alloys permit accurate and rapid study of sample composition and homogeneity.

Information

Type
Research Article
Information
Advances in X-Ray Analysis , Volume 12: Seventeenth Annual Conference on Applications of X-ray Analysis, August 21-23, 1968 , 1968, pp. 343 - 353
Copyright
Copyright © International Centre for Diffraction Data 1968

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1. Goldschmidt, V. M., “Geochemical Distribution Laws of the Elements, VIII. Research on the Structure and Properties of Crystal,” Skr. Akad. Oslo, 8: 34, 1926.Google Scholar
2. Giesecke, Von G. and Pfister, H., “prazisionsbestimmung der Gitterkonstanten von A3B5-Verbindungen,” Acta Cryst. 11: 369, 1958.Google Scholar
3. Ozolin'sh, J. V., Averkieva, G. K., Ievin'sh, A. F. and Gozyunova, N. A., “An X-Ray Study of some A3B5 Compounds which Display Deviation from Stoichiometxy,” Sov. Phys. Cryst. 7: 691, 1963.Google Scholar
4. Straumanis, M. E. and Kim, C. D., “Phase Extent of Gallium Arsenide Determined by the Lattice Constant and Density Method,’ Acta Cryst. 19: 256, 1965.Google Scholar
5. Bond, W. L., “precise Lattice Constant Determination,” Acta Cryst. 19: 814, 1960.Google Scholar
6. Londsdale, K., “International Tables: X-Ray Wavelength Values,” Acta Cryst. 19: 400, 1965.Google Scholar
7. Pierron, E. D., Parker, D. L. and McNeely, J. B., “Coefficient of Expansion of Gallium Arsenide from -62 to 200°C,” Acta Cryst. 21: 290, 1966.Google Scholar
8. Meieran, E. S. and Lemons, K. E., “A Study of Defects Due to Surface Processing in Silicon by Means of X-Ray Extinction Contrast Topography,” in W. M. Mueller, Editor, Advances in X-Ray Analysis, Vol. 8, Plenum Press, New York, 1965, p. 48–58.Google Scholar
9. Meieran, E. S., “Reflection X-Ray Topograph of GaAs Deposited on Ge,” J. Electrochem. Soc. 114: 292, 1967.Google Scholar