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Semiconductor Surface Characterization by Synchrotron X-ray Fluorescence Analysis

Published online by Cambridge University Press:  06 March 2019

Atsuo Iida
Atsuo Iida*
Affiliation:
Photon Factory National Laboratory for High Energy Physics O-ho, Tsukuba-shi, Ibaraki, 305 Japan
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Recently, external X-ray total reflection, or the grazing-incidence condition, is being widely used for the surface characterization in various research fields. Surface X-ray diffraction, or grazing-incidence diffraction/scattering, and total-reflection fluorescence XAFS (X-ray absorption fine structure) are typical, powerful techniques for surface characterization. X-ray fluorescence (XRF) analysis under the total-reflection condition has also been attracting much attention regarding analytical applications. Two types of XRF experiments have been carried out under the grazing-incidence condition. One is trace-element analysis of a dried solution sample or a semiconductor wafer; another is an analysis of the elemental concentration-profile in depth. Both experiments are closely related to each other, and are valuable and promising because of their non-destructive nature and the high precision of XRF analysis.

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Type
I. Surface and Near-Surface X-Ray Spectroscopy
Information
Advances in X-Ray Analysis , Volume 34: Thirty-Ninth Annual Conference on Applications of X-ray Analysis, July 30 - August 3, 1990 , 1990, pp. 23 - 33
Copyright
Copyright © International Centre for Diffraction Data 1990

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