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Structural Characterization of Thin Films by X-Ray Diffraction and Reflectivity

Published online by Cambridge University Press:  06 March 2019

Daniel T. Brower ,
Brian S. Medower  and
Ting C. Huang
Daniel T. Brower
Affiliation:
Optex Communications Corporation, 2 Research Court, Rockville, MD 20850
Brian S. Medower
Affiliation:
Optex Communications Corporation, 2 Research Court, Rockville, MD 20850
Ting C. Huang
Affiliation:
IBM Research Division, Almaden Research Center, 650 Harry Road, San Jose, CA 95120
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Abstract

X-ray polycrystalline diffraction was used to track progress toward improving the structural properties of SrS:(Eu,Sm) thin films. These thin films are used as the active layer of the ETOM (Electron Trapping Optical Memory) media. In this study conventional x-ray diffraction and x-ray reflectivity were used to evaluate the effect of two deposition parameters on film structures. Line broadening analysis performed using the Warren-Averbach technique showed the beneficial effects of a hydrogen sulfide reactive atmosphere and the RF magnetron sputtering technique on crystallite size and microstrain. A factor of five improvement in crystallite size and a factor of two reduction in microstrain was observed. Film thickness, density, and interfacial and surface roughnesses were determined for two SrS thin films. The sin2Ψ technique was used to determine the in-plane biaxial stress for two films prepared by different deposition techniques. These films exhibit inhomogeneous stress states with an average stress of less than IMPa.

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Type
Research Article
Information
Advances in X-Ray Analysis , Volume 39: Forty-Fourth Annual Conference on Applications of X-ray Analysis, July 31 - August 4, 1995 , 1995 , pp. 615 - 625
Copyright
Copyright © International Centre for Diffraction Data 1995

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