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Phosphorus diffusion in silicon

Published online by Cambridge University Press:  16 July 2009

J. R. King
J. R. King
Affiliation:
Department of Theoretical Mathematics, University of Nottingham, Nottingham, NG7 2RD, UK
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Abstract

Phosphorus diffusion in silicon shows a number of anomalous effects, and we apply asymptotic methods to a model problem which includes most of these. Both constant surface concentration problems and the diffusion of implanted dopant are considered. An unusual feature of the model is the non-local dependence of the tail diffusivity on the peak concentration.

Information

Type
Research Article
Information
European Journal of Applied Mathematics , Volume 1 , Issue 2 , June 1990, pp. 151 - 175
Copyright
Copyright © Cambridge University Press 1990

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