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Foreword

Published online by Cambridge University Press:  15 May 2009

Mahmoud Al Ahmad
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Abstract

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Type
Foreword
Information
International Journal of Microwave and Wireless Technologies , Volume 1 , Issue 1 , February 2009, pp. 3
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2009

The functionality of piezoelectric materials has become very useful in many integrated devices applications due to their electrical–mechanical reciprocity. Piezoelectric materials such as aluminum nitride (AlN) and lead zirconate oxide are widely employed. Therefore, it has become increasingly important to characterize the activity of piezoelectric materials relative to their applications and functionality. This special issue is dedicated to the piezoelectric materials characterization and microwave applications. The issue contains seven papers on the subject, in addition to four other papers.

Of the piezoelectric papers, Al Ahmad and Plana [Reference Al Ahmad and Plana1] describe the displacement detection of thin-film AlN using capacitance measurements while Menéndez et al. [Reference Menéndez, De Paco, Gemio, Verdú and Corrales2] report a design methodology for microwave acoustic filters. The third paper, by Muralt et al. [Reference Muralt, Conde, Artieda, Martin and Cantoni3], highlights the impact of material parameters for GHz applications; monolithic thin-film piezoelectric-on-substrate high-frequency filters are addressed by Abdolvand and Ayazi [Reference Abdolvand and Ayazi4] in the fourth paper. The fifth paper (Ikehashi et al. [Reference Ikehashi, Ogawa, Yamazaki and Ohguro5]) outlines a lithographical bending control method for piezoelectric actuator fabrication for MEMS applications. The correlation of capacitive RF-MEMS reliability to AlN is discussed by Papandreou et al. [Reference Papandreou, Papaioannou and Lisec6] while Poplavko et al. [Reference Poplavko, Molchanov and Yakimenko7] show the use of piezoelectric materials in building tunable microwave devices.

References

REFERENCES

[1]Al Ahmad, M.; Plana, R.: Vertical displacement detection of an aluminum nitride piezoelectric thin film using capacitance measurements. Int. J. Microwave and Wireless Tech., 1 (2009), 5–9.CrossRefGoogle Scholar
[2]Menéndez, O.; De Paco, P.; Gemio, J.; Verdú, J.; Corrales, E.: Methodology for designing microwave acoustic filters with Butterworth/Chebyshev response. Int. J. Microwave and Wireless Tech., 1 (2009), 11–18.CrossRefGoogle Scholar
[3]Muralt, P.; Conde, J.; Artieda, A.; Martin, F.; Cantoni, M.: Piezoelectric materials parameters for piezoelectric thin films in GHz applications. Int. J. Microwave and Wireless Tech., 1 (2009), 19–27.CrossRefGoogle Scholar
[4]Abdolvand, R.; Ayazi, F.: High-frequency monolithic thin-film piezoelectric-on-substrate filters. Int. J. Microwave and Wireless Tech., 1 (2009), 29–35.CrossRefGoogle Scholar
[5]Ikehashi, T.; Ogawa, E.; Yamazaki, H.; Ohguro, T.: Lithographical bending control method for a piezoelectric actuator. Int. J. Microwave and Wireless Tech., 1 (2009), 37–42.CrossRefGoogle Scholar
[6]Papandreou, E.; Papaioannou, G.; Lisec, T.: A correlation of capacitive RF-MEMS reliability to AlN dielectric film spontaneous polarization. Int. J. Microwave and Wireless Tech., 1 (2009), 43–47.CrossRefGoogle Scholar
[7]Poplavko, Y.M.; Molchanov, V.I.; Yakimenko, Y.I.: Piezo-controlled microwave devices. Int. J. Microwave and Wireless Tech., 1 (2009), 49–56.CrossRefGoogle Scholar
[8]Kaddour, D.; Arnould, J.-D.; Ferrari, P.: A semi-lumped microstrip UWB bandpass filter. Int. J. Microwave and Wireless Tech., 1 (2009), 57–64.CrossRefGoogle Scholar
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