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The 45° grain boundaries in YBa2Cu3O7−δ

Published online by Cambridge University Press:  31 January 2011

Stuart McKernan,
M. Grant Norton and
C. Barry Carter
Stuart McKernan*
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853
M. Grant Norton*
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853
C. Barry Carter*
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853
*
a)Present address: Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455.
b)Present address: Department of Mechanical and Materials Engineering, Washington State University, Pullman, Washington 99164.
a)Present address: Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455.
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Abstract

High-angle grain boundaries in YBa2Cu3O7−δ thin films are of technological interest because of the weak coupling observed between the grains; however, not all high-angle grain boundaries show this weak-link behavior. The microstructure of both these boundaries is not understood, nor is the reason for the differing electrical transport properties. High-angle grain boundaries in YBa2Cu3O7−δ thin films on MgO, where the angular misorientation between the grains is ∼45°, have been examined using high-resolution electron microscopy. The results show that the boundary structure can appear quite different even when the angular misorientation between the two grains is the same. The stability of the grain boundaries under the electron irradiation in the electron microscope was found to be a function of the accelerating voltage—400 kV leads to rapid disordering of the boundary region.

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Articles
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Journal of Materials Research , Volume 7 , Issue 5 , May 1992, pp. 1052 - 1059
Copyright
Copyright © Materials Research Society 1992

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