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Amorphous-to-polycrystalline phase transformations in Sn-implanted silicon

Published online by Cambridge University Press:  31 January 2011

R.P. Thornton,
R.G. Elliman and
J.S. Williams
R.P. Thornton
Affiliation:
Microelectronics and Materials Technology Centre, RMIT, Melbourne 3000, Australia
R.G. Elliman
Affiliation:
Microelectronics and Materials Technology Centre, RMIT, Melbourne 3000, Australia
J.S. Williams
Affiliation:
Microelectronics and Materials Technology Centre, RMIT, Melbourne 3000, Australia
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Abstract

An amorphous-to-fine-grain-polycrystalline phase transformation has been observed during annealing of Sn-implanted Si when the peak Sn concentration exceeds about 2 at.%. At lower Sn concentrations, epitaxial growth is retarded in (100) Si but proceeds to completion with a large fraction of Sn residing on substitutional lattice sites. As the Sn concentration is increased, epitaxy is pre-empted by the sudden transformation of the near-surface Sn-doped region into polycrystalline Si. The time required to initiate the transformation is temperature dependent and is characterized by an activation energy of ∼1.7 eV. Rapid redistribution of Sn has been observed to accompany the transformation. Our observations are shown to be consistent with a melt-mediated crystallization process which is rate limited by Sn diffusion and precipitation in amorphous Si.

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Articles
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Journal of Materials Research , Volume 5 , Issue 5 , May 1990, pp. 1003 - 1012
Copyright
Copyright © Materials Research Society 1990

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References

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