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Comparative study of vertical gradient freeze grown CdTe with variable Sn concentration

Published online by Cambridge University Press:  01 April 2006

J. Franc,
H. Elhadidy,
V. Babentsov,
A. Fauler and
M. Fiederle
J. Franc*
Affiliation:
Charles University, Faculty of Mathematics and Physics, Institute of Physics,Prague CZ 121 16, Czech Republic
H. Elhadidy
Affiliation:
Charles University, Faculty of Mathematics and Physics, Institute of Physics,Prague CZ 121 16, Czech Republic
V. Babentsov
Affiliation:
Institute for Semiconductor Physics, Kiev 03028, Ukraine
A. Fauler
Affiliation:
Materialforschungszentrum, Freiburg D-79104, Germany
M. Fiederle
Affiliation:
Materialforschungszentrum, Freiburg D-79104, Germany
*
a) Address all correspondence to this author. e-mail: franc@karlov.mff.cuni.cz
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Abstract

Four CdTe ingots with gradually increased concentration of the Sn impurity have been grown by the vertical gradient freeze method and were characterized with glow discharge mass spectroscopy, photoinduced current transient spectroscopy, resistivity, photoconductivity, and photoluminescence techniques. It was shown that the Sn impurity strongly influences resistivity and photoconductivity of the material. Concentration of Sn must be higher than the total concentration of residual acceptors to reach strong compensation. The middle-gap donor level pins the Fermi-level. Photoconductive high resistivity material can be prepared with Sn concentrations in the melt in the range 1018–1019 cm−3. In total, 6 electron traps and 3 hole traps were identified in the band gap by several complementary techniques.

Keywords

DefectsOptical properties

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Type
Articles
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Journal of Materials Research , Volume 21 , Issue 4 , April 2006, pp. 1025 - 1032
Copyright
Copyright © Materials Research Society 2006

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