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Phase transformations in (111) Si after spherical indentation

Published online by Cambridge University Press:  31 January 2011

Ayesha J. Haq and
P.R. Munroe
Ayesha J. Haq*
Affiliation:
School of Materials Science and Engineering, University of New South Wales, Sydney, New South Wales 2052, Australia
P.R. Munroe
Affiliation:
School of Materials Science and Engineering, University of New South Wales, Sydney, New South Wales 2052, Australia
*
a) Address all correspondence to this author. e-mail: ayesha@materials.unsw.edu.au
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Abstract

Phase transformations in (111) Si after spherical indentation have been investigated by cross-sectional transmission electron microscopy. Even at an indentation load of 20 mN, a phase transformation zone including the high-pressure crystalline Si phases was observed within the residual imprints. The volume of the transformation zone, as well as that of the crystalline phases increased with the indentation load. Below the transformation zone, slip was found to occur on {311} planes rather than on {111} planes, usually observed on indentation of (100) Si. The distribution of defects was asymmetric, and for indentation loads up to 80 mN, their density was significantly lower than that reported for (100) Si. The experimental observations correlated well with modeling of the applied stress through ELASTICA.

Keywords

NanoindentationSiTransmission electron microscopy (TEM)

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Type
Articles
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Journal of Materials Research , Volume 24 , Issue 6 , June 2009, pp. 1967 - 1975
Copyright
Copyright © Materials Research Society 2009

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References

1Bradby, J.E., Williams, J.S., Wong-Leung, J., Swain, M.V., and Munroe, P.: Transmission electron microscopy observation of deformation microstructure under spherical indentation in silicon. Appl. Phys. Lett. 77, 3749 (2000).Google Scholar
2Bradby, J.E., Williams, J.S., Wong-Leung, J., Swain, M.V., and Munroe, P.: Mechanical deformation in silicon by micro-indentation. J. Mater. Res. 16, 1500 (2001).CrossRefGoogle Scholar
3Zarudi, I. and Zhang, L.C.: Structure changes in monocrystalline silicon subjected to indentation-experimental findings. Tribol. Int. 32, 701 (1999).CrossRefGoogle Scholar
4Zarudi, I., Zhang, L.C., and Swain, M.V.: Microstructure evolution in monocrystalline silicon in cyclic microindentations. J. Mater. Res. 18, 758 (2003).Google Scholar
5Zarudi, I., Zou, J., and Zhang, L.C.: Microstructures of phases in indented silicon: A high resolution characterization. Appl. Phys. Lett. 82, 874 (2003).CrossRefGoogle Scholar
6Domnich, V. and Gogotsi, Y.: Phase transformations in silicon under contact loading. Rev. Adv. Mater. Sci. 3, 1 (2002).Google Scholar
7Ge, D., Domnich, V., and Gogotsi, Y.: High-resolution transmission-electron-microscopy study of metastable silicon phases produced by nanoindentation. J. Appl. Phys. 93, 2418 (2003).CrossRefGoogle Scholar
8Kailer, A., Gogotsi, Y.G., and Nickel, K.G.: Phase transformations of silicon caused by contact loading. J. Appl. Phys. 81, 3057 (1997).Google Scholar
9Domnich, V., Gogotsi, Y., and Dub, S.: Effect of phase transformations on the shape of the unloading curve in the nanoindentation of silicon. Appl. Phys. Lett. 76, 2214 (2000).CrossRefGoogle Scholar
10Juliano, T., Gogotsi, Y., and Domnich, V.: Effect of indentation unloading conditions on phase transformation induced events in silicon. J. Mater. Res. 18, 1192 (2003).CrossRefGoogle Scholar
11Juliano, T., Domnich, V., and Gogotsi, Y.: Examining pressure-induced phase transformations in silicon by spherical indentation and Raman spectroscopy. J. Mater. Res. 19, 3099 (2004).CrossRefGoogle Scholar
12Saka, H., Shimatani, A., Suganuma, M., and Suprijadi, : Transmission electron microscopy of amorphization and phase transformation beneath indents in Si. Philos. Mag. A 82, 1971 (2002).Google Scholar
13Zarudi, I., Zhang, L.C., Cheong, W.C.D., and Yu, T.X.: The difference of phase distributions in silicon after indentation with Berkovich and spherical indenters. Acta Mater. 53, 4795 (2005).CrossRefGoogle Scholar
14Yan, J., Takahashi, H., Gai, X., Harada, H., Tamaki, J., and Kuriyagawa, T.: Load effects on the phase transformation of single-crystal silicon during nanoindentation tests. Mater. Sci. Eng., A 423, 19 (2006).CrossRefGoogle Scholar
15Ruffell, S., Bradby, J.E., Williams, J.S., and Munroe, P.: Formation and growth of nanoindentation-induced high pressure phases in crystalline and amorphous silicon. J. Appl. Phys. 102, 063521 (2007).CrossRefGoogle Scholar
16Bradby, J.E., Williams, J.S., and Swain, M.V.: In situ electrical characterization of phase transformations in Si during indentation. Phys. Rev. B: Condens. Matter 67, 085205 (2003).CrossRefGoogle Scholar
17Ruffell, S., Bradby, J.E., Fujisawa, N., and Williams, J.S.: Identification of nanoindentation-induced phase changes in silicon by in situ electrical characterization. J. Appl. Phys. 101, 083531 (2007).Google Scholar
18Gupta, M.C. and Ruoff, A.L.: Static compression of silicon in the [100] and in the [111] directions. J. Appl. Phys. 51, 1072 (1980).Google Scholar
19Oliver, W.C. and Pharr, G.M.: An improved technique for determining hardness and elastic modulus using load and displacement sensing indentation experiments. J. Mater. Res. 7, 1564 (1992).CrossRefGoogle Scholar
20Saka, H. and Nagaya, G.: Plan-view transmission electron microscopy observation of a crack tip in silicon. Philos. Mag. Lett. 72, 251 (1995).Google Scholar
21Chudoba, T. and Schwarzer, N.: Elastica software package version 3, http://www.asmec.de/.Google Scholar
22Malkow, T., Arce-Garcia, I., Kolitsch, A., Schneider, D., Bull, S.J., and Page, T.F.: Mechanical properties and characterisation of very thin CNx films synthesised by IBAD. Diamond Relat. Mater. 10, 2199 (2001).Google Scholar
23http://www.ioffe.rssi.ru/SVA/NSM/Semicond/Si/mechanic.htm.Google Scholar
24Berasategui, E.G. and Page, T.F.: The contact response of thin SiC-coated silicon systems-characterization by nanoindentation. Surf. Coat. Technol. 163–164, 491 (2003).Google Scholar
25Haberl, B., Bradby, J.E., Ruffell, S., Williams, J.S., and Munroe, P.: Phase transformations induced by spherical indentation in ion-implanted amorphous silicon. J. Appl. Phys. 100, 013520 (2006).Google Scholar
26Pharr, G.M., Oliver, W.C., and Harding, D.S.: New evidence for a pressure-induced phase transformation during the indentation of silicon. J. Mater. Res. 6, 1129 (1991).CrossRefGoogle Scholar
27Weppelmann, E.R., Field, J.S., and Swain, M.V.: Observation, analysis, and simulation of the hysteresis of silicon using ultra-micro-indentation with spherical indenters. J. Mater. Res. 8, 830 (1993).Google Scholar
28Hu, J.Z., Merkle, L.D., Menoni, C.S., and Spain, I.L.: Crystal data for high-pressure phases of silicon. Phys. Rev. B: Condens. Matter 34, 4679 (1986).CrossRefGoogle ScholarPubMed
29George, A.: Properties of Crystalline Silicon, edited by Hull, R. (Inspec, London, 1999), p. 104.Google Scholar
30Yoshino, M., Aoki, T., Chandrasekaran, N., Shirakashi, T., and Komanduri, R.: Finite element simulation of plane strain plastic-elastic indentation on single-crystal silicon. Int. J. Mech. Sci. 43, 313 (2001).CrossRefGoogle Scholar
31Chudoba, T., Schwarzer, N., and Richter, F.: Steps towards a mechanical modeling of layered systems. Surf. Coat. Technol. 154, 140 (2002).CrossRefGoogle Scholar
32Chudoba, T., Griepentrog, M., Duck, A., Schneider, D., and Richter, F.: Young's modulus measurements on ultra-thin coatings. J. Mater. Res. 19, 301 (2004).CrossRefGoogle Scholar
33Gilman, J.J.: Shear-induced metallization. Philos. Mag. B 67, 207 (1993).CrossRefGoogle Scholar