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Transition from a punched-out dislocation to a slip dislocation revealed by electron tomography

Published online by Cambridge University Press:  31 January 2011

Masaki Tanaka,
Grace S. Liu,
Tomonobu Kishida,
Kenji Higashida and
Ian M. Robertson
Masaki Tanaka*
Affiliation:
Department of Materials Science and Engineering, Kyushu University Nishi-ku, Fukuoka 819-0395, Japan
Grace S. Liu
Affiliation:
Department of Materials Science and Engineering, University of Illinois, Urbana, Illinois 61801
Tomonobu Kishida
Affiliation:
Department of Materials Science and Engineering, Kyushu University Nishi-ku, Fukuoka 819-0395, Japan
Kenji Higashida
Affiliation:
Department of Materials Science and Engineering, Kyushu University Nishi-ku, Fukuoka 819-0395, Japan
Ian M. Robertson
Affiliation:
Department of Materials Science and Engineering, University of Illinois, Urbana, Illinois 61801
*
a)Address all correspondence to this author. e-mail: tanaka.masaki.760@m.kyushu-u.ac.jp
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Abstract

Punched-out dislocations emitted from an octahedral oxide precipitate in single-crystal silicon were investigated using high-voltage electron microscopy and tomography (HVEM-tomography) to understand the mechanism of softening caused by the oxide precipitates. In the present paper, direct evidence of the transition of a punched-out prismatic dislocation loop to a slip dislocation is presented. The punched-out dislocation grows into a large matrix dislocation loop by absorption of interstitial atoms, which were produced during oxide precipitation.

Keywords

DislocationsTransmission electron microscopy (TEM)Si

Information

Type
Articles
Information
Journal of Materials Research , Volume 25 , Issue 12 , December 2010, pp. 2292 - 2296
Copyright
Copyright © Materials Research Society 2010

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Footnotes

b)

Present address: Mitsubishi Heavy Industries, Ltd., 10 Ooe-cho, Minato-ku, Nagoya, 455-8515 Japan.

c)

This author was an editor of this journal during the review and decision stage. For the JMR policy on review and publication of manuscripts authored by editors, please refer to http://www.mrs.org/jmr_policy

References

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