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Assessing atomically thin delta-doping of silicon using mid-infrared ellipsometry

Published online by Cambridge University Press:  23 June 2020

Aaron M. Katzenmeyer,
Ting S. Luk,
Ezra Bussmann,
Steve Young,
Evan M. Anderson,
Michael T. Marshall,
James A. Ohlhausen,
Paul Kotula,
Ping Lu and
DeAnna M. Campbell
...Show all authors
Aaron M. Katzenmeyer
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico, 87123, USA
Ting S. Luk
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico, 87123, USA
Ezra Bussmann
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico, 87123, USA
Steve Young
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico, 87123, USA
Evan M. Anderson
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico, 87123, USA
Michael T. Marshall
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico, 87123, USA
James A. Ohlhausen
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico, 87123, USA
Paul Kotula
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico, 87123, USA
Ping Lu
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico, 87123, USA
DeAnna M. Campbell
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico, 87123, USA
Tzu-Ming Lu
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico, 87123, USA
Peter Q. Liu
Affiliation:
Department of Electrical Engineering, The State University of New York at Buffalo, Buffalo, New York14260, USA
Daniel R. Ward
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico, 87123, USA
Shashank Misra*
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico, 87123, USA
*
a)Address all correspondence to this author. e-mail: smisra@sandia.gov
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Abstract

Hydrogen lithography has been used to template phosphine-based surface chemistry to fabricate atomic-scale devices, a process we abbreviate as atomic precision advanced manufacturing (APAM). Here, we use mid-infrared variable angle spectroscopic ellipsometry (IR-VASE) to characterize single-nanometer thickness phosphorus dopant layers (δ-layers) in silicon made using APAM compatible processes. A large Drude response is directly attributable to the δ-layer and can be used for nondestructive monitoring of the condition of the APAM layer when integrating additional processing steps. The carrier density and mobility extracted from our room temperature IR-VASE measurements are consistent with cryogenic magneto-transport measurements, showing that APAM δ-layers function at room temperature. Finally, the permittivity extracted from these measurements shows that the doping in the APAM δ-layers is so large that their low-frequency in-plane response is reminiscent of a silicide. However, there is no indication of a plasma resonance, likely due to reduced dimensionality and/or low scattering lifetime.

Keywords

surface chemistrythin filmoptical properties

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Article
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Journal of Materials Research , Volume 35 , Issue 16 , 28 August 2020, pp. 2098 - 2105
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Copyright © Materials Research Society 2020

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