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Diffuse Phase Transition in Epitaxial BaTiO3 Thin Films

Published online by Cambridge University Press:  31 January 2011

Soma Chattopadhyay,
A. R. Teren,
Jin-Ha Hwang,
T. O. Mason and
B. W. Wessels
Soma Chattopadhyay
Affiliation:
Materials Research Center and Materials Science & Engineering Department, Northwestern University, 2225 North Campus Drive, Evanston, Illinois 60208
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Abstract

The thickness dependence of the dielectric properties of epitaxial BaTiO3 thin films was investigated for thicknesses ranging from 15 to 320 nm. The films were deposited by low-pressure metalorganic chemical vapor deposition on (100) MgO substrates. The relative dielectric permittivity and the loss tangent values decreased with decreasing thickness. High-temperature dielectric measurements showed that with decreasing film thickness, the ferroelectric-to-paraelectric transition temperature decreased, the relative dielectric permittivity decreased, and the phase transition was diffuse. The c/a ratio also decreased with decreasing film thickness. The observed behavior for epitaxial films of BaTiO3 was attributed to the presence of strain in the films.

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Articles
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Journal of Materials Research , Volume 17 , Issue 3 , March 2002, pp. 669 - 674
Copyright
Copyright © Materials Research Society 2002

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