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Dose-window dependence on Si crystal orientation in separation by implanted oxygen substrate formation

Published online by Cambridge University Press:  01 December 2004

H. Iikawa,
M. Nakao and
K. Izumi
H. Iikawa
Affiliation:
Research Institute for Advanced Science and Technology, Osaka Prefecture University, Sakai 599-8570 Japan
M. Nakao
Affiliation:
Research Institute for Advanced Science and Technology, Osaka Prefecture University, Sakai 599-8570 Japan
K. Izumi
Affiliation:
Research Institute for Advanced Science and Technology, Osaka Prefecture University, Sakai 599-8570 Japan
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Abstract

Separation by implemented oxygen (SIMOX)(111) substrates have been formed by oxygen-ion (16O+) implantation into Si(111), showing that a so-called “dose-window” at 16O+-implantation into Si differs from Si(100) to Si(111). In SIMOX(100), an oxygen dose of 4 × 1017/cm2 into Si(100) is widely recognized as the dose-window when the acceleration energy is 180 keV. For the first time, our work shows that an oxygen dose of 5 × 1017/cm2 into Si(111) is the dose-window for the formation of SIMOX(111) substrates when the acceleration energy is 180 keV. The difference between dose-windows is caused by anisotropy of the crystal orientation during growth of the faceted buried SiO2. We also numerically analyzed the data at different oxidation velocities for each facet of the polyhedral SiO2 islands. Numerical analysis results show good agreement with the experimental data.

Keywords

DefectsIon beam processingSemiconductor

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Type
Articles
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Journal of Materials Research , Volume 19 , Issue 12 , December 2004, pp. 3607 - 3613
Copyright
Copyright © Materials Research Society 2004

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