Hostname: page-component-7b7567c8c-7pwfn Total loading time: 0 Render date: 2026-11-15T20:55:26.038Z Has data issue: false hasContentIssue false
  • English
  • Français

Electroluminescence from amorphous-silicon-based switching devices

Published online by Cambridge University Press:  31 January 2011

V. A. Kuznetsov and
D. Haneman
V. A. Kuznetsov
Affiliation:
School of Physics, University of New South Wales, Sydney 2052, Australia
D. Haneman
Affiliation:
School of Physics, University of New South Wales, Sydney 2052, Australia
Get access

Abstract

Information about the nature of formed switching structures in amorphous hydrogenated silicon has been found from features of the electroluminescence (EL) spectrum. Several small peaks have been detected in the region of 1.8 to 2.4 eV, on the shoulder of the usual a-Si : H peak at 1.32 eV. The intensity of the latter is found to depend on the voltage across the film rather than the current. The EL fine structure can be explained in terms of a model of the switching where there are small metal-rich inclusions in the film. The apparent dependence of EL intensity on voltage is explained in terms of this model with parallel current paths in the structure.

Information

Type
Articles
Information
Journal of Materials Research , Volume 12 , Issue 1 , January 1997, pp. 17 - 20
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1.LeComber, P. G., Owens, A. E., Spear, W. E., Hajto, J., Snell, A. J., Choi, W. K., Rose, M. G., and Reynolds, S., J. Non-Cryst. Solids 77, 1373 (1985).CrossRefGoogle Scholar
2.Hajto, J., Owen, A. W., Gage, S. M., Snell, A. J., LeComber, P. G., and Rose, M. G., Phys. Rev. Lett. 66, 1918 (1991).CrossRefGoogle Scholar
3.Jafar, M. and Haneman, D., Phys. Rev. B 47, 10911 (1993).CrossRefGoogle Scholar
4.Hajto, J., Snell, A. J., Hu, J., Holmes, A. J., Owen, A. W., Rose, M. G., and Gibson, R. A. G., Philos. Mag. B 69, 237 (1994).CrossRefGoogle Scholar
5.Jafar, M. and Haneman, D., Phys. Rev. B 49, 13611 (1994).Google Scholar
6.Jafar, M. and Haneman, D., Phys. Rev. B 50, 5707 (1994).CrossRefGoogle Scholar
7.Hajto, J., McAuley, B., Snell, A. J., Milburn, G. H. W., and Owen, A. E., Appl. Surf. Sci. 92, 579 (1996).CrossRefGoogle Scholar
8.Lim, K. S., Konagai, M., and Takahashi, K., Jpn. J. Appl. Phys. 21, 1473 (1982).CrossRefGoogle Scholar
9.Buckingham, R. A., in Quantum Theory, edited by Bates, D. R. (Academic Press, New York, 1961), pp. 104–145.Google Scholar
10.DiMaria, D. J. D., Kirtley, J. R., Pakulis, E. J., Dong, D. W., Kuan, T. S., Pesavento, F. L., Theis, T. N., Cutro, J. A., and Brorson, S. D., J. Appl. Phys. 56, 401 (1984).CrossRefGoogle Scholar
11.Single Charge Tunneling, edited by Grabert, H. and Devoret, M. H. (Plenum Press, New York, 1992).CrossRefGoogle Scholar