Hostname: page-component-7b7567c8c-jswmv Total loading time: 0 Render date: 2026-11-15T12:53:08.143Z Has data issue: false hasContentIssue false
  • English
  • Français

Electromigration at the high-Pb–eutectic SnPb solder interface

Published online by Cambridge University Press:  03 March 2011

C.L. Lai,
C.H. Lin and
Chih Chen
C.L. Lai
Affiliation:
Department of Materials Science and Engineering, National Chiao Tung University, Hsin-Chu 300, Taiwan, Republic of China
C.H. Lin
Affiliation:
Department of Materials Science and Engineering, National Chiao Tung University, Hsin-Chu 300, Taiwan, Republic of China
Chih Chen
Affiliation:
Department of Materials Science and Engineering, National Chiao Tung University, Hsin-Chu 300, Taiwan, Republic of China
Get access

Abstract

The electromigration behavior of the composite solder composed of eutectic and high-lead SnPb was investigated with 5.7 × 104 A/cm2 current stressing. Voids and hillocks were found only within the eutectic solder, and the high-lead solder remained intact. Electromigration was accelerated dramatically at 150 °C, and Pb became the major migration species of eutectic SnPb for the microstructure change at the anode. The polarity of the opposite current direction was also studied. When electrons drift from the eutectic side to the high-lead side, voids occurred at the eutectic–Cu interface whereas hillocks accumulated at the eutectic–high-lead interface. When the current was reversed, voids occurred at the eutectic–high-lead interface whereas hillocks accumulated at the eutectic–Cu interface. The anchoring effect, which results from the attaching of the lead-rich grains in the eutectic solder to the high-lead solder, was considered to retard the electromigration damage only in this current direction.

Keywords

ElectromigrationPackaging

Information

Type
Articles
Information
Journal of Materials Research , Volume 19 , Issue 2 , February 2004, pp. 550 - 556
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1Huntington, H.B. and Grone, A.R.: J. Phys. Chem. Solids 20, 76 (1961).CrossRefGoogle Scholar
2Blech, I.A.: J. Appl. Phys. 47, 1203 (1976).CrossRefGoogle Scholar
3Landauer, R. and Woo, James W.F.: Phys. Rev. B10 4, 1266 (1974).CrossRefGoogle Scholar
4Tu, K.N.: Phys. Rev. B 45, 1409 (1992).CrossRefGoogle Scholar
5International Technology Roadmap for Semiconductors (Semiconductor Industry Association, San Jose, CA, 1999).Google Scholar
6Huynh, Q.T., Liu, C.Y., Chen, Chih and Tu, K.N.: J. Appl. Phys. 89, 4332 (2001).CrossRefGoogle Scholar
7Lee, T.Y., Tu, K.N., Kuo, S.M. and Frear, D.R.: J. Appl. Phys. 90, 4502 (2001).CrossRefGoogle Scholar
8Liu, C.Y., Chen, Chih and Tu, K.N.: J. Appl. Phys. 88, 5703 (2000).CrossRefGoogle Scholar
9Powell, D.O. and Trivedi, A.K., in Proc. 43rd Electronic Components and Technology Conference, IEEE Components, Packaging and Manufacturing Technology Society, Orlando, FL, 1993, pp. 182–186.Google Scholar
10Doot, R.K., in Proc. 46th Electronic Components and Technology Conference, IEEE Components, Packaging, and Manufacturing Technology Society, Orlando, FL, 1996, pp. 535–539.Google Scholar
11Lau, J.H.: Ball Grid Array Technology (McGraw-Hill, New York, 1995).Google Scholar
12Shukla, R., Murali, V. and Bhansali, A., in Proc. 49th Electronic Components and Technology Conference, IEEE Components, Packaging, and Manufacturing Technology Society, Orlando, FL, 1999, pp. 945–949.Google Scholar
13Gupta, D., Vieregge, K. and Gust, W.: Acta Mater. 47, 5 (1999).CrossRefGoogle Scholar