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Electron channeling patterns of a-axis and c-axis YBa2Cu3O7−δ thin films

Published online by Cambridge University Press:  31 January 2011

K.H. Young,
J.Z. Sun,
D. Kapolnek,
E.J. Tarsa,
A. Inam and
B.H.T. Chai
K.H. Young
Affiliation:
Superconductor Technologies Inc., 460-F Ward Drive, Santa Barbara, California 93111
J.Z. Sun
Affiliation:
Superconductor Technologies Inc., 460-F Ward Drive, Santa Barbara, California 93111
D. Kapolnek
Affiliation:
Superconductor Technologies Inc., 460-F Ward Drive, Santa Barbara, California 93111
E.J. Tarsa
Affiliation:
Superconductor Technologies Inc., 460-F Ward Drive, Santa Barbara, California 93111
A. Inam
Affiliation:
Bell Communication Research, Red Bank, New Jersey 07701
B.H.T. Chai
Affiliation:
Center for Research in Electro-optics and Lasers, University of Central Florida, Orlando, Florida 23826
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Abstract

We have studied the electron channeling patterns (ECPs) of both pure a-axis and pure c-axis epitaxial YBa2Cu3O7−δ thin films on various substrates. ECPs from three representative a-axis films [on PrBa2Cu3O7−δ buffered LaAlO3 (001), MgO (001), and SrLaAlO4 (001)] and three c-axis films [on LaAlO3 (001), NdGaO3 (001), and SrTiO3 (001)] are presented. The differences between both sets of ECPs are discussed and recorded as references for future identifications.

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Articles
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Journal of Materials Research , Volume 6 , Issue 12 , December 1991, pp. 2501 - 2506
Copyright
Copyright © Materials Research Society 1991

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References

1.Tozer, S. W., Kleinsasser, A. W., Oenney, T., Kaiser, D., and Holtzberg, F., Phys. Rev. Lett. 59, 1768 (1987).CrossRefGoogle Scholar
2.Worthington, T. K., Gallagher, W. J., and Dinger, T. R., Phys. Rev. Lett. 59, 1160 (1987).CrossRefGoogle Scholar
3.Zhao, B. R., Yuan, C. W., Zhang, Y. Z., Gao, J., Zhao, Y. Y., Xu, P., Yang, Y. M., and Li, L., J. Appl. Phys. 68, 3493 (1990).CrossRefGoogle Scholar
4.Eom, C. B., Marshall, A. F., Laderman, S. S., Jacowitz, R. D., and Geballe, T. H., Science 249, 1549 (1990).CrossRefGoogle Scholar
5.Inam, A., Rogers, C. T., Ramesh, R., Farrow, L., Remschnig, K., Hart, D., and Venkatesan, T., Appl. Phys. Lett. 57, 2484 (1990).CrossRefGoogle Scholar
6.Ramesh, R., Inam, A., Hart, D. L., and Rogers, C. T., Physics C 170 325 (1990)Google Scholar
7. For example, Young, K., Horng, S., Kahn, A., and Phillips, J. M., in Chemistry and Defects in Semiconductor Heterostructures, edited by Kawabe, M., Sands, T. D., Weber, E. R., and Williams, R. S. (Mater. Res. Soc. Symp. Proc. 148, Pittsburgh, PA, 1989), p. 185.Google Scholar
8.Ophir-Arad, E., Fastow, R., and Kalish, R., Appl. Phys. Lett. 57, 2098 (1990).Google Scholar
9.Newbury, D. E. and Yakowitz, H., in Practical Scanning Electron Microscopy, edited by Goldstein, J. I. and Yakowitz, H. (Plenum Press, New York, 1975), pp. 149–179.Google Scholar
10.Kang, W. J., Yoshimi, K., Hanada, S., Saito, S., Murayama, Y., Hayashi, S., and Nagata, A., J. Appl. Phys. 68, 6341 (1990).CrossRefGoogle Scholar
11.Young, K., Sun, J. Z., James, T. W., and Nilsson, B. V., in Defects in Materials, edited by Bristowe, P. D., Epperson, J. E., Griffith, J. E., and Liliental-Weber, Z. (Mater. Res. Soc. Symp. Proc. 209, Pittsburgh, PA, 1991), p. 831.Google Scholar
12.Young, K. and Sun, J. Z., to be published in J. Appl. Phys.Google Scholar
13.Brown, R., Pendrick, V., Kalokitis, D., and Chai, B. H. T., Appl. Phys. Lett. 57, 1351 (1990).CrossRefGoogle Scholar
14.Young, K., Negrete, G. V., Hammond, R. B., Inam, A., Hart, D. L., Ramesh, R., and Yonezawa, Y., Appl. Phys. Lett. 58, 1789 (1991).CrossRefGoogle Scholar
15.Young, K., Sun, J. Z., and Negrete, G. V., to be published in Jpn. J. Appl. Phys. 30, 8A (1991).Google Scholar
16.Young, K. and Negrete, G. V., Jpn. J. Appl. Phys. 30, L706 (1991)Google Scholar