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Electronic transport and microstructure in MoSi2 thin films

Published online by Cambridge University Press:  31 January 2011

T.L. Martin and
J.E. Mahan
T.L. Martin
Affiliation:
Department of Electrical Engineering and Condensed Matter Sciences Laboratory, Colorado State University, Fort Collins, Colorado 80523
J.E. Mahan
Affiliation:
Department of Electrical Engineering and Condensed Matter Sciences Laboratory, Colorado State University, Fort Collins, Colorado 80523
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Abstract

Molybdenum disilicide thin films having the tetragonal crystal structure were prepared by furnace reaction of ion-beam-sputtered molybdenum layers with silicon substrates. The room temperature intrinsic resistivity is ∼20 μΩ cm. The Hall effect indicates predominantly hole conduction. Geometrical magnetoresistance measurements provide a carrier mobility estimate of 90 cm2 /V.s at room temperature. The Hall mobility is much less than this; the large difference between the two mobility values suggests multiband conduction. An isotropic, degenerate, twoband model may be fitted to the data with a comparatively low majority carrier concentration (holes) of ∼ 1.5 × 1021 cm−3 Regarding the effects of microstructure on transport, the residual resistivity for films formed on 1-0-0 silicon wafers is much greater than for those formed on an (LPCVD) polysilicon layer: 92 vs 29 μΩ cm, respectively. A correlation with average grain size for the two sample types suggests that grain boundary scattering is the principal cause of the residual resistivity. electronic materials; electrical properties; thin film

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Articles
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Journal of Materials Research , Volume 1 , Issue 3 , June 1986, pp. 493 - 502
Copyright
Copyright © Materials Research Society 1986

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References

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