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High resolution electron microscopy of ion-irradiated GdBa2Cu3O7

Published online by Cambridge University Press:  31 January 2011

G. Van Tendeloo,
M-O. Ruault,
H. Bernas and
M. Gasgnier
G. Van Tendeloo
Affiliation:
University of Antwerp (RUCA) Groenenborgerlaan 171, B2020, Antwerp, Belgium
M-O. Ruault
Affiliation:
Centre de Spectrométrie Nucléaire et Spectrométrie de Masse, IN2P3 CNRS Bât. 108, 91405 Campus Orsay, France
H. Bernas
Affiliation:
Centre de Spectrométrie Nucléaire et Spectrométrie de Masse, IN2P3 CNRS Bât. 108, 91405 Campus Orsay, France
M. Gasgnier
Affiliation:
UPR 210, CNRS, 1 Place A. Briand, 92195 Meudon, France
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Abstract

GdBa2Cu3O7 crystals were irradiated at room temperature with 200 keV Ne ions and 300 keV Xe ions. In situ standard TEM and further HREM studies show two types of extended defects: (i) mobile extended defects, which account for the preferential defect pinning to twin boundaries reported earlier. These defects are rapidly recovered and difficult to observe by HREM investigations; (ii) stable amorphous areas which are clearly identified by HREM observations. Their overlapping and aggregation conceivably lead to amorphization of the sample.

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Type
Articles
Information
Journal of Materials Research , Volume 6 , Issue 4 , April 1991, pp. 677 - 681
Copyright
Copyright © Materials Research Society 1991

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