Hostname: page-component-7b7567c8c-2n9c9 Total loading time: 0 Render date: 2026-11-15T15:53:36.891Z Has data issue: false hasContentIssue false
  • English
  • Français

Interfacial Microstructure Evolution Between Eutectic SnAgCu Solder and Al/Ni(V)/Cu Thin Films

Published online by Cambridge University Press:  31 January 2011

M. Li,
F. Zhang,
W. T. Chen,
K. Zeng,
K. N. Tu,
H. Balkan and
P. Elenius
M. Li
Affiliation:
Institute of Materials Research and Engineering, Singapore 119260
F. Zhang
Affiliation:
Institute of Materials Research and Engineering, Singapore 119260
W. T. Chen
Affiliation:
Institute of Materials Research and Engineering, Singapore 119260
K. Zeng
Affiliation:
Department of Materials Science and Engineering, UCLA, Los Angeles,California 90095–1595
K. N. Tu
Affiliation:
Department of Materials Science and Engineering, UCLA, Los Angeles,California 90095–1595
H. Balkan
Affiliation:
K & S—Flip Chip Division, Phoenix, Arizona 85034
P. Elenius
Affiliation:
K & S—Flip Chip Division, Phoenix, Arizona 85034
Get access

Abstract

The evolution of interfacial microstructure of eutectic SnAgCu and SnPb solders on Al/Ni(V)/Cu thin films was investigated after various heat treatments. In the eutectic SnPb system, the Ni(V) layer was well protected after 20 reflow cycles at 220 °C. In the SnAgCu solder system, after 5 reflow cycles at 260 °C, the (Cu,Ni)6Sn5 ternary phase formed and Sn was detected in the Ni(V) layer. After 20 reflow cycles, the Ni(V) layer disappeared and spalling of the (Cu,Ni)6Sn5 was observed, which explains the transition to brittle failure mode after ball shear testing. The different interfacial reactions that occurred in the molten SnAgCu and SnPb systems were explained in terms of different solubilities of Cu in the two systems. The dissolution and formation of the (Cu,Ni)6Sn5phase were discussed on the basis of a Sn–Ni–Cu phase diagram. In the solid-state aging study of the SnAgCu samples annealed at 150 °C for up to 1000 h, the Ni(V) layer was intact and the intermetallic compound formed was Cu6Sn5 and not (Cu,Ni)6Sn5, which is the same as was observed for the eutectic SnPb system.

Information

Type
Articles
Information
Journal of Materials Research , Volume 17 , Issue 7 , July 2002, pp. 1612 - 1621
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

IPC Roadmap, A Guide for Assembly of Lead-free Electronics (Draft IV, Northbrook, IL, Nov. 1999).Google Scholar
Lead-free Solder Project Final Report (National Center for Manufacturing Science, Ann Arbor, MI, Aug. 1997).Google Scholar
Abtew, M. and Selvaduray, G., Mater. Sci. Eng. 27, 95 (2000).CrossRefGoogle Scholar
Glazer, J., J. Electron. Mater. 23, 693 (1994).CrossRefGoogle Scholar
Korhonen, T.M., Su, P., Hong, S.J., Korhonen, M.A., and Li, C.Y., J. Electron. Mater. 28, 1146 (1999).CrossRefGoogle Scholar
Tummala, R., Fundamentals of Microsystems Packaging (McGraw Hill, New York, 2000), Chap. 9.Google Scholar
Pan, G.Z., Liu, A.A., Kim, H.K., Tu, K.N., and Totta, P.A., Appl. Phys. Lett. 71, 2946 (1997).CrossRefGoogle Scholar
Elenius, P., Solid State Technol. 45 (Apr. 1999).Google Scholar
Balkan, H., Sanchez, J., Burgess, G., Johnson, M., Carlson, C., Rooney, B., Stepniak, D., Wood, J., Patterson, D., and Elenius, P., in Flip Chip Technology Workshop, June 18–20, 2001, Austin, TX (IMAPS, Reston, VA, 2001), p. 426.Google Scholar
Tu, K.N., Lee, T.Y., Jang, J.W., Li, L., Frear, D.R., Zeng, K., and Kivilahti, J.K., J. Appl. Phys. 89, 4843 (2001).CrossRefGoogle Scholar
Liu, C.Y., Tu, K.N., Sheng, T.T., Tung, C.H., Frear, D.R., and Elenius, P., J. Appl. Phys. 87, 750 (2000).CrossRefGoogle Scholar
Teo, P.S., Huang, Y.W., Tung, C.H., Marks, M.R., and Lim, T.B., in Proceedings of the 50th Electronic Components & Technology Conference, May 21–24, 2000, Las Vegas, NV (IEEE, Piscataway, NJ, 2000), p. 33.Google Scholar
Liu, A.A., Kim, H.K., Tu, K.N., and Totta, P.A., J. Appl. Phys. 80, 2774 (1996).CrossRefGoogle Scholar
Kim, H.K., Tu, K.N., and Totta, P.A., Appl. Phys. Lett. 68, 2204 (1996).CrossRefGoogle Scholar
Ohtani, H., Okuda, K., and Ishida, K., J. Phase Equilib. 16, 416 (1995).CrossRefGoogle Scholar
Shim, J-H., Oh, C-S., Lee, B-J., and Lee, D.N., Z. Metallkd. 87, 205 (1996).Google Scholar
Bolcavage, A., Kao, C.R., Chen, S.L., and Chang, Y.A., in Proceedings of Applications of Thermodynamics in the Synthesis and Processing of Materials, edited by Nash, P. and Sundman, B., Oct. 2–6, 1994, Rosemont, IL (TMS, Warrendale, PA, 1995), p. 171.Google Scholar
Hayes, F.H., Lukas, H.L., Effenberg, G., and Petzow, G., Z. Metallkd. 77, 749 (1986).Google Scholar
Oh, C-S., Shim, J-H., Lee, B-J., and Lee, D.N., J. Alloys Compd. 238, 155 (1996).CrossRefGoogle Scholar
Moon, K-W., Boettinger, W.J., Kattner, U.R., Biancaniello, F.S., and Handwerker, C.A., J. Electron. Mater. 29, 1122 (2000).CrossRefGoogle Scholar
Kim, P.G., Jang, J.W., Lee, T.Y., and Tu, K.N., J. Appl. Phys. 86, 6746 (1999).CrossRefGoogle Scholar
Wassink, R.J.K., Soldering in Electronics, 2nd ed. (Electrochemical Publications Limited, Isle of Man, British Isles, United Kingdom, 1989).Google Scholar
Jang, J.W., Kim, P.G., Tu, K.N., Frear, D.R., and Thompson, P., J. Appl. Phys. 85, 8456 (1999).CrossRefGoogle Scholar
Frear, D., Hosking, F., and Vianco, P., in Proceedings of Materials Developments in Microelectronic Packaging: Performance and Reliability, Aug. 19–22, 1991, Montreal, Quebec, Canada (ASM International, Materials Park, OH, 1991), p. 229.Google Scholar
Zeng, K., Vuorinen, V., and Kivilahti, J.K., in Proceedings of 51st Electronic Components & Technology Conference, May 29–June 31, 2001, Orlando, FL (IEEE, Piscataway, NJ, 2001), p. 685.Google Scholar
Zeng, K. and Kivilahti, J.K., J. Electron. Mater. 30, 35 (2001).CrossRefGoogle Scholar