Hostname: page-component-7b7567c8c-2n9c9 Total loading time: 0 Render date: 2026-11-14T19:47:43.785Z Has data issue: false hasContentIssue false
  • English
  • Français

A mechanism for reactive diffusion between Si single crystal and NbC powder compact

Published online by Cambridge University Press:  31 January 2011

C. R. Kao,
J. Woodford and
Y. A. Chang
C. R. Kao
Affiliation:
Department of Chemical Engineering, National Central University, Chung Li, Taiwan
J. Woodford
Affiliation:
Department of Materials Science and Engineering, University of Wisconsin–Madison, Madison, Wisconsin 53706–1595
Y. A. Chang
Affiliation:
Department of Materials Science and Engineering, University of Wisconsin–Madison, Madison, Wisconsin 53706–1595
Get access

Abstract

Based on our recent experimental observations, a growth mechanism for the reactive diffusion between Si single crystal and NbC powder compact is proposed. In Si–NbC diffusion couples annealed at 1300 °C, a two-phase NbSi2 + SiC reaction layer formed with NbSi2 as the matrix and SiC as discontinuous particles. The NbSi2 grain sizes and SiC particle sizes are both in the μm range. We propose that the SiC particles nucleated at the void surfaces in the NbC powder compact. This proposed nucleation mechanism offers a potential way of controlling the SiC particle size by changing the void size and void density of the NbC powder compact. It is also pointed out that this microstructure requires Si to be the dominant diffusing species. Si must diffuse through the reaction layer, while C only has to undergo local rearrangement, and Nb need not diffuse at all.

Information

Type
Articles
Information
Journal of Materials Research , Volume 11 , Issue 4 , April 1996, pp. 850 - 854
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1.Henager, C. H. Jr., Brimhall, J.L., and Hirth, J. P., Mater. Sci. Eng. A155, 109 (1992).CrossRefGoogle Scholar
2.Henager, C. H. Jr., Brimhall, J. L., and Hirth, J.P., in Synthesis and Processing of Ceramics: Scientific Issues, edited by Rhine, W. E., Shaw, T. M., Gottschall, R. J., and Chen, Y. (Mater. Res. Soc. Symp. Proc. 249, Pittsburgh, PA 1992), p. 523.Google Scholar
3.Henager, C. H. Jr., Brimhall, J.L., and Hirth, J.P., Scripta Metall. Mater. 26, 585 (1992).CrossRefGoogle Scholar
4.Henager, C. H. Jr., Brimhall, J. L., Vetrano, J.S., and Hirth, J.P., in Intermetallic Matrix Composites II, edited by Miracle, D. B., Anton, D. L., and Graves, J.A. (Mater. Res. Soc. Symp. Proc. 273, Pittsburgh, PA, 1991), p. 281.Google Scholar
5.Chang, Y. A. and Kao, C. R., Pure Appl. Chem. 66, 1797 (1994).CrossRefGoogle Scholar
6.Chang, Y. A., Kao, C. R., and Woodford, J., in Applications of Thermodynamics in the Synthesis and Processing of Materials, edited by Nash, P. and Sundman, B. (TMS, Warrendale, PA, 1995), p. 3.Google Scholar
7.Kao, C. R., Woodford, J., and Chang, Y. A., Acta. Metall. Sinica (English edition) 8, 447 (1995).Google Scholar
8.Kao, C. R., Woodford, J., Kim, S., Zhang, M-X., and Chang, Y.A., Mater. Sci. Eng. A195, 29 (1995).CrossRefGoogle Scholar
9.Rapp, R. A., Ezis, A., and Yurek, G. J., Metall. Trans. 4, 1283 (1973).CrossRefGoogle Scholar
10.Yurek, G. J., Rapp, R. A., and Hirth, J.P., Metall. Trans. 4, 1293 (1973).CrossRefGoogle Scholar
11.Shatynski, S. R., Hirth, J. P., and Rapp, R. A., Metall. Trans. A 10A, 591 (1979).CrossRefGoogle Scholar
12.Chen, S. L. and Chang, Y. A., in Applications of Thermodynamics in the Synthesis and Processing of Materials, edited by Nash, P. and Sundman, B. (TMS, Warrendale, PA, 1995), p. 37.Google Scholar
13.Woodford, J., Master's Thesis, University of Wisconsin-Madison (1995).Google Scholar