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Microstructural interaction of Y2Ba4Cu8O16 stacking faults within YBa2Cu3O7−x

Published online by Cambridge University Press:  31 January 2011

A. F. Marshall,
K. Char,
R. W. Barton,
A. Kapitulnik and
S. S. Laderman
A. F. Marshall
Affiliation:
Center for Materials Research and Department of Applied Physics, Stanford University, Stanford, California 94305
K. Char
Affiliation:
Center for Materials Research and Department of Applied Physics, Stanford University, Stanford, California 94305
R. W. Barton
Affiliation:
Center for Materials Research and Department of Applied Physics, Stanford University, Stanford, California 94305
A. Kapitulnik
Affiliation:
Center for Materials Research and Department of Applied Physics, Stanford University, Stanford, California 94305
S. S. Laderman
Affiliation:
Hewlett Packard Corporation, Palo Alto, California 94304
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Abstract

A transmission electron microscopy study of a post-annealed YBa2Cu3O7−x thin film shows that extra Cu–O planes within the structure can aggregate as stacking faults to form a defect microstructure rather than forming the well-ordered Y2Ba4Cu8O16 phase. Interaction of the stacking faults with the surrounding matrix results in strain effects and microstructural variations which may hinder ordering as well as influencing superconducting properties if occurring in higher concentration. When viewed normal to the plane of the film, the boundaries of the stacking faults can be imaged as dislocation-like defects, indicating the size and shape of the stacking faults and their relationship to other defects such as twins and second phase precipitates.

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Articles
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Journal of Materials Research , Volume 5 , Issue 10 , October 1990, pp. 2049 - 2055
Copyright
Copyright © Materials Research Society 1990

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References

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