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A parametric study of titanium silicide formation by rapid thermal processing

Published online by Cambridge University Press:  31 January 2011

A. V. Amorsolo Jr.,
P. D. Funkenbusch and
A. M. Kadin
A. V. Amorsolo Jr.
Affiliation:
Department of Mechanical Engineering, University of Rochester, Rochester, New York 14627
P. D. Funkenbusch
Affiliation:
Department of Mechanical Engineering, University of Rochester, Rochester, New York 14627
A. M. Kadin
Affiliation:
Department of Electrical Engineering, University of Rochester, Rochester, New York 14627
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Abstract

A parametric study of titanium silicide formation by rapid thermal processing was conducted to determine the effects of annealing temperature (650 °C, 750 °C), annealing time (30 s, 60 s), wet etching (no HF dip, with HF dip), sputter etching (no sputter etch, with sputter etch), and annealing ambient (Ar, N2) on the completeness of conversion of 60 nm Ti on (111)-Si to C54–TiSi2 based on sheet resistance and the uniformity of the sheet resistance measurements across the entire wafer. Statistical analysis of the results showed that temperature, annealing ambient, and sputter etching had the greatest influence. Increasing the temperature and using argon gas instead of nitrogen promoted conversion of the film to C54–TiSi2. On the other hand, sputter etching retarded it. The results also indicated significant interactions among these factors. The best uniformity in sheet resistance was obtained by annealing at 750 °C without sputter etching. The different sheet resistance profiles showed gradients that were consistent with expected profile behaviors, arising from temperature variations across the wafer due to the effect of a flowing cold gas and the effects of the wafer edge and flats.

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Articles
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Journal of Materials Research , Volume 11 , Issue 2 , February 1996, pp. 412 - 421
Copyright
Copyright © Materials Research Society 1996

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