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Possible evidence for overcoordination at semiconductor grain boundaries

Published online by Cambridge University Press:  31 January 2011

W. Krakow,
A. A. Levi and
S. T. Pantelides
W. Krakow
Affiliation:
IBM Research Division, T.J. Watson Research Center, Yorktown Heights, New York 10598
A. A. Levi
Affiliation:
IBM Research Division, T.J. Watson Research Center, Yorktown Heights, New York 10598
S. T. Pantelides
Affiliation:
IBM Research Division, T.J. Watson Research Center, Yorktown Heights, New York 10598
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Abstract

The structure of a near coincidence Ge tilt grain boundary, containing a step, has been derived from a high resolution electron micrograph. There are two possible interpretations of portions of this interface, one of which is the existence of a sheet of fivefold coordinated atoms between the Σ = 19 and Σ = 27 coincidence misorientations. This finding may represent the first experimental evidence that overcoordinated atoms are present at semiconductor grain boundaries free of a screw dislocation.

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Articles
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Journal of Materials Research , Volume 5 , Issue 3 , March 1990, pp. 587 - 592
Copyright
Copyright © Materials Research Society 1990

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