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Processing and Characterization of High-conductance Bismuth Wire Array Composites

Published online by Cambridge University Press:  31 January 2011

T. E. Huber,
M. J. Graf,
C. A. Foss Jr and
P. Constant
T. E. Huber
Affiliation:
Laser Research Laboratory, Howard University, Washington, District of Columbia 20059
M. J. Graf
Affiliation:
Department of Physics, Boston College, Chestnut Hill, Massachusetts 02467
C. A. Foss Jr
Affiliation:
Department of Chemistry, Georgetown University, Washington, District of Columbia 20057-2222
P. Constant
Affiliation:
Laser Research Laboratory, Howard University, Washington, District of Columbia 20059
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Abstract

We fabricated Bi nanowire array composites with wire diameters from 30 to 200 nm by high-pressure injection (HPI) of Bi melt into porous anodic alumina templates. The composites were dense, with Bi volume fraction in excess of 50%. The parallel Bi nanowires, whose length appeared to be limited only by the thickness of the host template (up to 55 μm), terminated at both sides of the composite in the Bi bulk. The individual Bi nanowire crystal structure was rhombohedral, with the same lattice parameters as that of bulk Bi; the wires in the array were predominantly oriented with the trigonal axis along the wire length. Low contact resistance was achieved by bonding the composite to copper electrodes.

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Type
Articles
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Journal of Materials Research , Volume 15 , Issue 8 , August 2000, pp. 1816 - 1821
Copyright
Copyright © Materials Research Society 2000

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