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Silicon carbide grown by liquid phase epitaxy in microgravity

Published online by Cambridge University Press:  31 January 2011

R. Yakimova,
M. Syväjärvi,
C. Lockowandt,
M. K. Linnarsson,
H. H. Radamson and
E. Janzén
R. Yakimova
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden
M. Syväjärvi
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden
C. Lockowandt
Affiliation:
Swedish Space Corporation, PO Box 4207, S-171 04 Solna, Sweden
M. K. Linnarsson
Affiliation:
Solid State Electronics, Royal Institute of Technology, S-164 40 Kista-Stockholm, Sweden
H. H. Radamson
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden
E. Janzén
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden
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Extract

6H and 4H polytype silicon carbide (SiC) layers have been grown on ground and under microgravity conditions by liquid phase epitaxy (LPE) from a solution of SiC in Si-Sc solvent at 1750 °C. The effects of gravity on the growth parameters and material characteristiques have been studied. The growth rate, Sc incorporation, and the structural defects are modified in reduced gravity conditions, while the polytype reproduction of the substrate is not affected. The results obtained are intriguing as to further experiments providing objects for carrier lifetime measurements.

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Articles
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Journal of Materials Research , Volume 13 , Issue 7 , July 1998, pp. 1812 - 1815
Copyright
Copyright © Materials Research Society 1998

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