Hostname: page-component-7b7567c8c-mnklg Total loading time: 0 Render date: 2026-11-13T09:58:29.882Z Has data issue: false hasContentIssue false
  • English
  • Français

Sputtered WSix for micromechanical structures

Published online by Cambridge University Press:  03 March 2011

Muh-Ling Ger and
Richard B. Brown
Muh-Ling Ger*
Affiliation:
Department of Electrical Engineering and Computer Science Center for Integrated Sensors and Circuits, University of Michigan, Ann Arbor, Michigan 48109-2122
Richard B. Brown
Affiliation:
Department of Electrical Engineering and Computer Science Center for Integrated Sensors and Circuits, University of Michigan, Ann Arbor, Michigan 48109-2122
*
a)Present address: Motorola Inc. Advanced Custom Technologies. Semiconductor Products Sector, P.O. Box 20906, Phoenix, Arizona 85036-0906.
Get access

Abstract

Tungsten silicide (WSix) thin tilms have been investigated for use as integrated circuit interconnect and self-aligned MESFET (metal-semiconductor field-effect transistor) gates because of their low resistivity and thermal and chemical stability. These same characteristics make them interesting materials for prospective use in micromechanical structures. However, little information on residual stresses, elastic moduli, or other micromechanical properties has been available for refractory metal silicide thin films. This paper presents the morphology and stress characteristics of cosputtered WSix thin films, including crystal structure variations and orientation-dependent stresses, as a function of the deposition pressure. The compositions of WSix thin films were analyzed by Rutherford backscattering spectrometry (RBS). The biaxial elastic modulus and thermal coefficient of expansion were found for the sputtered films. Stress-measurement methods and annealing are discussed. Released diaphragms of different sizes and shapes, having controlled residual stress, have been fabricated.

Information

Type
Articles
Information
Journal of Materials Research , Volume 10 , Issue 7 , July 1995, pp. 1710 - 1720
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1Brown, R. B., Ger, M-L., and Nguyen, T., IEEE Proc. MEMS (1990), pp. 77–81.Google Scholar
2Lahav, A. G. and Wu, C. S., J. Vac. Sci. Technol. B 6(6), 1785–1795 (1988).CrossRefGoogle Scholar
3Ohnishi, T., Yokoyama, N., Onodera, H., Suzuki, S., and Shibatomi, A., Appl. Phys. Lett. 43(6), 600–602 (1983).CrossRefGoogle Scholar
4Kanamori, M., Nagai, K., and Nozaki, T., J. Vac. Sci. Technol. B5(5), 1317–1320 (1987).CrossRefGoogle Scholar
5Jaccodine, R. J. and Schlegel, W. A., J. Appl. Phys. 37(6), 2429–2434 (1966).CrossRefGoogle Scholar
6Brantley, W. A., J. Appl. Phys. 44(1), 534–535 (1973).CrossRefGoogle Scholar
7Saunders, P. A. and Ziegler, J. F., Nucl. Instrum. Methods 218, 67–74 (1983).CrossRefGoogle Scholar
8Doolittle, L. R., Nucl. Instrum. Methods B9, 344–351 (1985).CrossRefGoogle Scholar
9Doolittle, L. R., Nucl. Instrum. Methods B15, 227–231 (1986).CrossRefGoogle Scholar
10Josefowicz, J. Y. and Rensch, D. B., J. Vac. Sci. Technol. B 5, (6), 1707–1715 (1987).CrossRefGoogle Scholar
11Maissel, L. I. and Francombe, M. H., An Introduction to Thin Films (Gordon and Breach Science, New York, 1973), pp. 205–207.Google Scholar
12Thornton, J. A. and Hoffman, D. W., J. Vac. Sci. Technol. 14(1), 164–168 (1977).CrossRefGoogle Scholar
13Wu, C. T., Thin Solid Films 64, 103–110 (1979).CrossRefGoogle Scholar
14Fahnline, D., Yang, B., Vedam, K., Messier, R., and Pilione, L., in Thin Films: Stresses and Mechanical Properties, edited by Bravman, J. C., Nix, W. D., Barnett, D. M., and Smith, D. A. (Mater.Res. Soc. Symp. Proc. 130, Pittsburgh, PA, 1989), pp. 355–360.Google Scholar
15Müller, K.H., J. Appl. Phys. 62(5), 1796 (1987).CrossRefGoogle Scholar
16Brown, R. B., Ger, M-L., and Nguyen, T., IEEE Proc. MEMS (1990), pp. 77–81.Google Scholar
17Feldman, L. C. and Mayer, J. W., Fundamentals of Surface and Thin Film Analysis (Elsevier Science, New York, 1986).Google Scholar
18Hoffman, R. W., Phys. Thin Films 3, 211–273 (1966).Google Scholar
19Thermophysical Properties of Matter, The TPRC Data Series XIII, edited by Touloukian, Y.S. and Ho, C-Y. (1970), pp. 154, 747.Google Scholar
20Blech, I. and Cohen, U., J. Appl. Phys. 53(6), 4202–4207 (1982).CrossRefGoogle Scholar