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Stress-induced migration model based on atomic migration

Published online by Cambridge University Press:  03 March 2011

Minoru Aoyagi
Minoru Aoyagi*
Affiliation:
Department of Electrical and Electronics Engineering, Nippon Institute of Technology, 4-1 Gakuendai, Miyashiro-machi, Minami-saitama-gun, Saitama 345-8501, Japan
*
a) Address all correspondence to this author. e-mail: aoyagi@nit.ac.jp
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Abstract

Stress-induced migration is one of the problems related to the reliability of metal interconnections in semiconductor devices. This phenomenon generates voids and disconnections in the metal interconnections. The purposes of this work are to establish the stress-induced model based on atomic migration and theoretically clarify the temperature characteristics of void formation and disconnection using the presented model. First, the stress-induced migration model based on atomic migration in which the driving force is the gradient of elastic potential is presented. Next, to clarify the temperature characteristics of stress-induced migration, the presented model is applied to the formation of voids and disconnections and the results of theoretical analyses are compared with experimental results. It was found that the temperature characteristics of the void formation show various patterns depending on the void interval, and the temperature characteristics of the disconnection show various patterns depending on the void interval and void radius. These theoretical results are in agreement with the experimental results.

Keywords

DefectsDiffusionSemiconductor

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Type
Articles
Information
Journal of Materials Research , Volume 19 , Issue 8 , August 2004, pp. 2349 - 2355
Copyright
Copyright © Materials Research Society 2004

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