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High-resolution silicon Kβ X-ray spectra and crystal structure

Published online by Cambridge University Press:  05 July 2018

J. Purton and
D. S. Urch
J. Purton
Affiliation:
Department of Chemistry, Queen Mary College, Mile End Road, London E1 4NS
D. S. Urch
Affiliation:
Department of Chemistry, Queen Mary College, Mile End Road, London E1 4NS
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Abstract

High-resolution X-ray emission spectra (XES) are presented for minerals with a variety of structures. The participation of the Si 3p orbitals in bonding is influenced by the local structure around the silicon atom. In orthosilicates the distortion of the SiO4 4--tetrahedron influences both peak-width and the intensity of the high-energy shoulder of the Si-Kβ spectrum. In minerals containing Si-O-Si bonds there is mixing of the Si 3s and 3p orbitals giving rise to a peak on the low-energy side of the main Si-Kβ peak. When combined with X-ray photoelectron spectra (XPS), a complete molecular orbital picture of bonding can be established.

Keywords

X-ray emission spectroscopysilicon Kβ X-raysilicateselectronic structurechemical bond

Information

Type
Research Article
Information
Mineralogical Magazine , Volume 53 , Issue 370 , April 1989, pp. 239 - 244
Copyright
Copyright © The Mineralogical Society of Great Britain and Ireland 1989

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