Hostname: page-component-74656f9884-j7cmm Total loading time: 0 Render date: 2026-11-08T23:08:04.690Z Has data issue: false hasContentIssue false
  • English
  • Français

Development of an all-SiC neuronal interface device

Published online by Cambridge University Press:  16 May 2016

Evans Bernardin ,
Christopher L. Frewin ,
Abhishek Dey ,
Richard Everly ,
Jawad Ul Hassan ,
Erik Janzén ,
Joe Pancrazio  and
Stephen E. Saddow
Evans Bernardin*
Affiliation:
Department of Electrical Engineering, University of South Florida, Tampa, FL 33612, U.S.A.
Christopher L. Frewin
Affiliation:
Department of Bioengineering, University of Texas at Dallas, Dallas, TX 75080, U.S.A
Abhishek Dey
Affiliation:
Department of Electrical Engineering, University of South Florida, Tampa, FL 33612, U.S.A.
Richard Everly
Affiliation:
Nanotechnology Research and Education Center @ U.S.F., Tampa, FL 33617, U.S.A.
Jawad Ul Hassan
Affiliation:
Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-581 83 Linköping, Sweden
Erik Janzén
Affiliation:
Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-581 83 Linköping, Sweden
Joe Pancrazio
Affiliation:
Department of Bioengineering, University of Texas at Dallas, Dallas, TX 75080, U.S.A
Stephen E. Saddow
Affiliation:
Department of Electrical Engineering, University of South Florida, Tampa, FL 33612, U.S.A.
*
*(Email: ebernardin@mail.usf.edu)
Get access

Abstract

The intracortical neural interface (INI) is a key component of brain machine interfaces (BMI) which offer the possibility to restore functions lost by patients due to severe trauma to the central or peripheral nervous system. Unfortunately today’s neural electrodes suffer from a variety of design flaws, mainly the use of non-biocompatible materials based on Si or W with polymer coatings to mask the underlying material. Silicon carbide (SiC) is a semiconductor that has been proven to be highly biocompatible, and this chemically inert, physically robust material system may provide the longevity and reliability needed for the INI community. The design, fabrication, and preliminary testing of a prototype all-SiC planar microelectrode array based on 4H-SiC with an amorphous silicon carbide (a-SiC) insulator is described. The fabrication of the planar microelectrode was performed utilizing a series of conventional micromachining steps. Preliminary data is presented which shows a proof of concept for an all-SiC microelectrode device.

Keywords

devicesbiomedicalplasma-enhanced CVD (PECVD) (deposition)

Information

Type
Articles
Information
MRS Advances , Volume 1 , Issue 55: Electronics and Photonics , 2016 , pp. 3679 - 3684
Copyright
Copyright © Materials Research Society 2016 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

Donoghue, J. P., "Bridging the brain to the world: a perspective on neural interface systems," Neuron, vol. 60, pp. 511–21, Nov 6 2008.Google Scholar
Barrese, J. C., Aceros, J., and Donoghue, J. P., "Scanning electron microscopy of chronically implanted intracortical microelectrode arrays in non-human primates," J Neural Eng, vol. 13, p. 026003, Jan 29 2016.Google Scholar
Cogan, S. F., "Neural stimulation and recording electrodes," Annual Review of Biomedical Engineering, vol. 10, pp. 275–309, 2008.Google Scholar
Kotov, N. A., Winter, J. O., Clements, I. P., Jan, E., Timko, B. P., Campidelli, S., et al. , "Nanomaterials for Neural Interfaces," Advanced Materials, vol. 21, pp. 3970–4004, 2009.Google Scholar
Polikov, V. S., Tresco, P. A., and Reichert, W. M., "Response of brain tissue to chronically implanted neural electrodes," Journal of Neuroscience Methods, vol. 148, p. 18, 2005/08/08 2005.Google Scholar
Saddow, S. E., Frewin, C. L., Nezafati, M., Oliveros, A., Afroz, S., Register, J., et al. , "3C-SiC on Si: A bio- and hemo-compatible material for advanced nano-bio devices," in Nanotechnology Materials and Devices Conference (NMDC), 2014 IEEE 9th, 2014, pp. 49–53.CrossRefGoogle Scholar
Frewin, C. L., Jaroszeski, M., Weeber, E., Muffly, K. E., Kumar, A., Peters, M., et al. , "Atomic force microscopy analysis of central nervous system cell morphology on silicon carbide and diamond substrates," Journal of Molecular Recognition, vol. 22, pp. 380–8, Sep-Oct 2009.Google Scholar
Frewin, C. L., Locke, C., Mariusso, L., Weeber, E. J., and Saddow, S. E., "Silicon Carbide Neural Implants: in vivo Neural Tissue Reaction," Neural Engineering (NER), 6th International IEEE/EMBS Conference on, pp. 661–664, 2013.Google Scholar
Cogan, S. F., Edell, D. J., Guzelian, A. A., Ping Liu, Y., and Edell, R., "Plasma-enhanced chemical vapor deposited silicon carbide as an implantable dielectric coating," Journal of Biomedical Materials Research Part A, vol. 67, pp. 856–67, Dec 1 2003.Google Scholar
Hassan, J., Bae, H., Lilja, L., Farkas, I., Kim, I., Stenberg, P., et al. , "Fast growth rate epitaxy on 4o off-cut 4-inch diameter 4H-SiC wafers," in Silicon Carbide and Related Materials 2013, Pts 1 and 2. vol. 778-780, Okumura, H., Harima, H., Kimoto, T., Yoshimoto, M., Watanabe, H., Hatayama, T., et al. , Eds., ed, 2014, pp. 179–182.Google Scholar
Kern, W. and Puotinen, D. A., "Cleaning Solutions Based on Hydrogen Peroxide for Use in Silicon Semiconductor Technology," Rca Review, vol. 31, pp. 187-&, 1970.Google Scholar
Minnikanti, S., Diao, G., Pancrazio, J. J., Xie, X., Rieth, L., Solzbacher, F., et al. , "Lifetime assessment of atomic-layer-deposited Al2O3-Parylene C bilayer coating for neural interfaces using accelerated age testing and electrochemical characterization," Acta Biomater. S1742–7061(13)00548-5, vol. S1742-7061, 2013.Google Scholar
Cahan, B. D. and Chen, C. T., "Questions on the Kinetics of O 2 Evolution on Oxide-Covered Metals," Journal of The Electrochemical Society, vol. 129, pp. 700–705, April 1, 1982 1982.Google Scholar
Bott, A. W., "Electrochemistry of Semiconductors," Current Separations, vol. 17, 1998.Google Scholar