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II-VI Material Integration With Silicon for Detector and PV Applications

Published online by Cambridge University Press:  06 June 2016

T.A. Gessert,
E. Colegrove,
B. Stafford,
R. Kodama,
Wei Gao,
H.R. Moutinho,
D. Kuciauskas,
R.C. Reedy,
T.M. Barnes and
S. Sivananthan
T.A. Gessert*
Affiliation:
EPIR Inc. Bolingbrook, IL 60440
E. Colegrove
Affiliation:
University of Illinois at Chicago, Physics Department, Chicago, IL 60612
B. Stafford
Affiliation:
University of Illinois at Chicago, Physics Department, Chicago, IL 60612
R. Kodama
Affiliation:
EPIR Inc. Bolingbrook, IL 60440
Wei Gao
Affiliation:
University of Illinois at Chicago, Physics Department, Chicago, IL 60612
H.R. Moutinho
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
D. Kuciauskas
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
R.C. Reedy
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
T.M. Barnes
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
S. Sivananthan
Affiliation:
University of Illinois at Chicago, Physics Department, Chicago, IL 60612
*
§ (Email: tim.gessert3@gmail.com)
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Abstract

Heteroepitaxial growth of high-quality II-VI-alloy materials on Si substrates is a well-established commercial growth process for infrared (IR) detector devices. However, it has only recently been recognized that these same processes may have important applications for production of high-efficiency photovoltaic devices. This submission reviews the process developments that have enabled effective heteroepitaxy of II-VI alloy materials on lattice-mismatched Si for IR detectors as a foundation to describe recent efforts to apply these insights to the fabrication of multijunction Si/CdZnTe devices with ultimate conversion efficiencies >40%. Reviewed photovoltaic studies include multijunction Si/CdZnTe devices with conversion efficiency of ∼17%, analysis of structural and optoelectrical quality of undoped CdTe epilayer films on Si, and the effect that a Te-rich growth environment has on the structural and optoelectronic quality of both undoped and As-doped heteroepitaxial CdTe.

Keywords

photovoltaicepitaxyTe

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Type
Articles
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MRS Advances , Volume 1 , Issue 50: Electronics and Photonics , 2016, pp. 3391 - 3402
Copyright
Copyright © Materials Research Society 2016 

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References

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