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STM Tip-Induced Switching in Molybdenum Disulfide-Based Atomristors

Published online by Cambridge University Press:  22 July 2019

Jesse E. Thompson*
Affiliation:
Department of Physics and Nanoscience Technology Center, University of Central Florida, Orlando, FL32826, U.S.A.
Brandon T. Blue
Affiliation:
Department of Physics and Nanoscience Technology Center, University of Central Florida, Orlando, FL32826, U.S.A.
Darian Smalley
Affiliation:
Department of Physics and Nanoscience Technology Center, University of Central Florida, Orlando, FL32826, U.S.A.
Fernand Torres-Davila
Affiliation:
Department of Physics and Nanoscience Technology Center, University of Central Florida, Orlando, FL32826, U.S.A.
Laurene Tetard
Affiliation:
Department of Physics and Nanoscience Technology Center, University of Central Florida, Orlando, FL32826, U.S.A.
Jeremy T. Robinson
Affiliation:
Naval Research Laboratory, Washington D.C., 20375, U.S.A.
Masahiro Ishigami
Affiliation:
Department of Physics and Nanoscience Technology Center, University of Central Florida, Orlando, FL32826, U.S.A.
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Abstract

Scanning tunneling microscopy and spectroscopy (STM/STS) are used to electronically switch atomically-thin memristors, referred to as “atomristors”, based on a graphene/molybdenum disulfide (MoS2)/Au heterostructure. A gold-assisted exfoliation method was used to produce near-millimeter (mm) scale MoS2 on Au thin-film substrates, followed by transfer of a separately exfoliated graphene top layer. Our results reveal that it is possible to switch the conductivity of a graphene/MoS2/Au memristor stack using an STM tip. These results provide a path to further studies of atomically-thin memristors fabricated from heterostructures of two-dimensional materials such as graphene and transition metal dichalcogenides (TMDs).

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Copyright
Copyright © Materials Research Society 2019 

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