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Defects Behavior in Disordered Iron Oxide Synthesized from Grain-Oriented Iron Foils

Published online by Cambridge University Press:  22 January 2019

Karen A. Neri,
José A. Andraca,
Ramón Peña and
Roberto Baca
Karen A. Neri*
Affiliation:
Doctorate in Nanoscience and Micro-Nanotechnology, Escuela Superior de Ciencias Biológicas (ENCB), Instituto Politécnico Nacional, Mexico City, México. E-mail: neri.karen8@gmail.com.
José A. Andraca
Affiliation:
Unidad Profesional Interdisciplinaria de Ingeniería Campus Hidalgo (UPIIH), Instituto Politécnico Nacional, Pachuca, Hidalgo, México.
Ramón Peña
Affiliation:
Department of Electrical Engineering, Solid State Electronics Section, Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional, Mexico City, México.
Roberto Baca
Affiliation:
Department of Electronics, Escuela Superior de Ingeniería Mecánica y Eléctrica (ESIME), Instituto Politécnico Nacional, Mexico City, México.
*
*(Email: neri.karen8@gmail.com)
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Abstract

Disordered iron oxide thin-films synthesized from grain-oriented iron foils were grown on both glass and Si (100) n-type substrates by vacuum evaporation followed by thermal oxidation at low temperatures. Defects such as vacancies formation has been studied using Atomic Force Microscopy (AFM) and Raman Spectroscopy. The kinetic of oxidation as a function of surface parameters was investigated by AFM studies. The vibrational modes (bands) connected with the vacancies formation and magnetic ordering into the iron oxide structure were validated by Raman spectroscopy. Space-charge effects can be influenced by discontinuous growth of iron oxide and correlated with their structure parameters. Finally, the disordered iron oxide will be useful for the next generation of adaptive oxide devices.

Keywords

defectsFeoxidethin filmrecycling

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Type
Articles
Information
MRS Advances , Volume 4 , Issue 1: Characterization, Mechanical Properties and Structure-Property Relationships , 2019, pp. 51 - 59
Copyright
Copyright © Materials Research Society 2019 

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