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Electronic Properties of CdTe/CdS Solar Cells as Influenced by aBuffer Layer

Published online by Cambridge University Press:  28 January 2016

Y. G. Fedorenko*
Affiliation:
Stephenson Institute for Renewable Energy and Department of Physics, School of Physical Sciences, Chadwick Building, University of Liverpool, Liverpool L69 7ZF, UK
J. D. Major
Affiliation:
Stephenson Institute for Renewable Energy and Department of Physics, School of Physical Sciences, Chadwick Building, University of Liverpool, Liverpool L69 7ZF, UK
A. Pressman
Affiliation:
Stephenson Institute for Renewable Energy and Department of Physics, School of Physical Sciences, Chadwick Building, University of Liverpool, Liverpool L69 7ZF, UK
L. Phillips
Affiliation:
Stephenson Institute for Renewable Energy and Department of Physics, School of Physical Sciences, Chadwick Building, University of Liverpool, Liverpool L69 7ZF, UK
K. Durose
Affiliation:
Stephenson Institute for Renewable Energy and Department of Physics, School of Physical Sciences, Chadwick Building, University of Liverpool, Liverpool L69 7ZF, UK
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Abstract

We considered modification of the defect density of states in CdTe as influencedby a buffer layer in ZnO(ZnS, SnSe)/CdS/CdTe solar cells. Compared to the solarcells employing ZnO buffer layers, implementation of ZnSe and ZnS resulted inthe lower net ionized acceptor concentration and the energy shift of thedominant deep trap levels to the midgap of CdTe. The results clearly indicatedthat the same defect was responsible for the inefficient doping and theformation of recombination centers in CdTe. This observation can be explainedtaking into account the effect of strain on the electronic properties of thegrain boundary interface states in polycrystalline CdTe. In the conditions ofstrain, interaction of chlorine with the grain boundary point defects can bealtered.

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Copyright
Copyright © Materials Research Society 2016 

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