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Metallic β-Nb2N Films Epitaxially Grown by MBEon Hexagonal SiC Substrates

Published online by Cambridge University Press:  15 January 2016

D. Scott Katzer,
Neeraj Nepal,
David J. Meyer,
Brian P. Downey,
Virginia Wheeler,
David F. Storm and
Matthew T. Hardy
D. Scott Katzer*
Affiliation:
U.S. Naval Research Laboratory, Washington, D.C., U.S.A.
Neeraj Nepal
Affiliation:
Sotera Defense Solutions, Herndon, VA, U.S.A.
David J. Meyer
Affiliation:
U.S. Naval Research Laboratory, Washington, D.C., U.S.A.
Brian P. Downey
Affiliation:
U.S. Naval Research Laboratory, Washington, D.C., U.S.A.
Virginia Wheeler
Affiliation:
U.S. Naval Research Laboratory, Washington, D.C., U.S.A.
David F. Storm
Affiliation:
U.S. Naval Research Laboratory, Washington, D.C., U.S.A.
Matthew T. Hardy
Affiliation:
National Research Council Postdoctoral Fellow residing at the U.S. Naval Research Laboratory, Washington, D.C., U.S.A.
*
*(Email: scott.katzer@nrl.navy.mil)
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Abstract

RF-plasma MBE was used to epitaxially grow 4 – 100-nm-thick metallicβ-Nb2N thin films on hexagonal SiC substrates. When theN/Nb flux ratios are greater than one, the most critical parameter forhigh-quality β-Nb2N is the substrate temperature. The X-raydiffraction (XRD) of films grown between 775 °C and 850 °Cdemonstrates pure β-Nb2N phase formation which was alsoconfirmed by X-ray photoelectron spectroscopy and transmission electronmicroscopy measurements. Using the (0002) and (21 $\bar 3$1) XRD peaks of a β-Nb2N film grown at 850°C reveals a 0.68% lattice mismatch to the 6H-SiC substrate. Thissuggests that β-Nb2N can be used for high-qualitymetal/semiconductor heterostructures that cannot be fabricated at present.

Keywords

molecular beam epitaxy (MBE)Nbnitride

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Type
Articles
Information
MRS Advances , Volume 1 , Issue 2: Energy and Sustainability , 2016, pp. 127 - 132
Copyright
Copyright © Materials Research Society 2016 

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References

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