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Micro Grain Analysis in Plastically Deformed Silicon by 2nd-Order X-Ray Diffraction

Published online by Cambridge University Press:  26 June 2018

Gabriel Dina ,
Ariel Gomez Gonzalez ,
Sérgio L. Morelhão  and
Stefan Kycia
Gabriel Dina
Affiliation:
Department of Physics, University of Guelph, Guelph, Ontario, Canada
Ariel Gomez Gonzalez
Affiliation:
Department of Physics, University of Guelph, Guelph, Ontario, Canada
Sérgio L. Morelhão
Affiliation:
Department of Physics, University of Guelph, Guelph, Ontario, Canada Institute of Physics, University of São Paulo, São Paulo, SP, Brazil
Stefan Kycia*
Affiliation:
Department of Physics, University of Guelph, Guelph, Ontario, Canada
*
*(Email: skycia@uoguelph.ca)
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Abstract

Second-order diffraction (SOD) of x-rays refers to all diffraction processes where the photons reaching the detector have been diffracted twice within a crystal lattice. By measuring the two dimensional intensity profile of SOD, it is possible to distinguishing rescattering processes taking place inside each grain (perfect crystal domain) or in between grains. These two SOD regimes, usually called dynamical and kinematical, respectively, are ruled by size and relative orientation of the grains. In this work, we demonstrate how to explore SOD phenomena to understand the micro scale grain structure in plastically deformed silicon single crystal.

Keywords

x-ray diffraction (XRD)microstructureSi

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Type
Articles
Information
MRS Advances , Volume 3 , Issue 39: Characterization, Modeling and Theory , 2018 , pp. 2347 - 2352
Copyright
Copyright © Materials Research Society 2018 

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