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Non Radiative Processes in Phosphorene

Published online by Cambridge University Press:  09 February 2016

Eric Tea and
Celine Hin
Eric Tea*
Affiliation:
Department of Mechanical Engineering, Virginia Polytechnic Institute and State University, 635 Prices Fork Road, Blacksburg, VA, 24060, USA
Celine Hin
Affiliation:
Department of Mechanical Engineering, Virginia Polytechnic Institute and State University, 635 Prices Fork Road, Blacksburg, VA, 24060, USADepartment of Materials Science and Engineering, Virginia Polytechnic Institute and State University, 635 Prices Fork Road, Blacksburg, VA, 24060, USA
*
*(Email: etea.contact@gmail.com)
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Abstract

Novel 2D materials with interesting properties have been synthetized and characterized recently. In particular, unlike graphene, silicene or germanene, phosphorene has attracted a lot of attention because of its intrinsic band gap. This property allows for a wide range of applications where semiconductor thin films are traditionally used (e.g. electronics, optoelectronics, thermoelectrics). For each application, the device efficiency depends on how well an electrical current is extracted from the active materials, and depends on a variety of electron scattering processes. Some of these scattering processes can considerably improve or degrade device efficiencies. In this contribution we focus on non-radiative electron-hole pair generation and recombination processes, i.e. impact ionization (charge carrier multiplication) and Auger processes (charge carrier recombination). The rate of these processes is calculated from first principles and their effects on device operation are estimated.

Keywords

electronic structureoptoelectronicelectronic material

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Type
Articles
Information
MRS Advances , Volume 1 , Issue 22: Electronics and Photonics , 2016, pp. 1605 - 1611
Copyright
Copyright © Materials Research Society 2016 

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References

REFERENCES

El Kurdi, M., Fishman, G., Sauvage, S., and Boucaud, P., J. Appl. Phys. 107, 013710 (2010)Google Scholar
Nomura, K. et al. , Nature 432, 488 (2004)Google Scholar
Akiwande, D., Petrone, N., and Hone, J., Nature Communications DOI: 10.1038/ncomms6678 Google Scholar
Kim, J. et al. , Science 349, 723 (2015)Google Scholar
Buscema, M. et al. , Nature Communications DOI: 10.1038/ncomms5651 (2014)Google Scholar
Koenig, S. P. et al. , Appl. Phys. Lett. 104, 103106 (2014)Google Scholar
Avsar, A. et al. , ACS Nano 9, 4138 (2015)Google Scholar
Meric, I. et al. , Proceeding of the IEEE 101, 1609 (2013)Google Scholar
Dean, C. et al. , Solid State Comm. 152, 1275 (2012)Google Scholar
Hattori, Y., Taniguchi, T., Watanabe, K., and Nagashio, K., ACS Nano 9, 916 (2015)Google Scholar
Liao, B. et al. , Phys. Rev. B 91, 235419 (2015)Google Scholar
Cakir, D., Sevik, C., and Peeters, F. M., Phys. Rev. B 92, 165406 (2015)Google Scholar
Tran, V., Soklaski, R., Liang, Y., and Yang, Li, Phys. Rev. B 89, 235319 (2014)Google Scholar