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Rectifying Behavior and Light Emission from Nickel Oxide MIS Structures

Published online by Cambridge University Press:  09 September 2016

Kamruzzaman Khan ,
Srikanth Itapu  and
Daniel G. Georgiev
Kamruzzaman Khan*
Affiliation:
Department of Electrical Engineering and Computer Science, University of Toledo, Toledo, OH 43606, U.S.A.
Srikanth Itapu
Affiliation:
Department of Electrical Engineering and Computer Science, University of Toledo, Toledo, OH 43606, U.S.A.
Daniel G. Georgiev
Affiliation:
Department of Electrical Engineering and Computer Science, University of Toledo, Toledo, OH 43606, U.S.A.
*
*(Email: Kamruzzaman.Khan@rockets.utoledo.edu)
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Abstract

We have demonstrated the NiO/ZnO based rectifying diode for LED application for substituting GaN for optoelectronics applications. We have systematically studied the current-voltage (I-V) characteristics of NiO based Metal-Insulator-Semiconductor (MIS) devices under forward and reverse bias for its use in LED applications. The results obtained show that the current increases exponentially with the voltage after a critical turn-on-voltage. The mechanism of carrier transport responsible for the rectifying behavior of the MIS structure as well as the light emission is discussed in relation to the experimental results.

Keywords

optoelectronicoxideluminescence

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Type
Articles
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MRS Advances , Volume 1 , Issue 49: Electronics and Photonics , 2016 , pp. 3341 - 3347
Copyright
Copyright © Materials Research Society 2016 

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References

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