Hostname: page-component-7b7567c8c-tnzcf Total loading time: 0 Render date: 2026-11-13T17:58:14.174Z Has data issue: false hasContentIssue false
  • English
  • Français

Single and Few-Layer MoS2: CVD Synthesis, Transference, and Photodetection Application

Published online by Cambridge University Press:  31 May 2017

Gustavo A. Saenz,
Carlos de Anda Orea and
Anupama B. Kaul
Gustavo A. Saenz
Affiliation:
Electrical and Computer Engineering Department, University of Texas, El Paso, TX 79968, U.S.A
Carlos de Anda Orea
Affiliation:
Electrical and Computer Engineering Department, University of Texas, El Paso, TX 79968, U.S.A
Anupama B. Kaul*
Affiliation:
Electrical and Computer Engineering Department, University of Texas, El Paso, TX 79968, U.S.A
*
*E-mail: akaul@utep.edu
Get access

Abstract

Two-dimensional layered materials, materials with weak out-of-plane van der Waals bonding and strong in-plane covalent bonding, have attracted special attention in recent years since the isolation and characterization of monolayer graphite, the graphene. The electrical bandgap in Transition Metal Di-Chalcogenides (TMDCs), non-existent in graphene, make them a good alternative family of materials for novel electronic and optoelectronic applications. 2H- MoS2, one of the most stable TMDCs, has been extensively studied, including the synthesis methods, and its potential applications in photodetection. The chemical vapor deposition (CVD) synthesis method has increased its potential over the years. The advantages of this method are scalability compared to micromechanical exfoliation, common process used in research laboratories, and the maintenance of the quality and intrinsic properties of the material compared to the liquid exfoliation methods. In this work, we synthesized high quality pristine 2H-MoS2 via atmospheric pressure chemical vapor deposition (APCVD) by vapor phase reaction of MoO3 and S powder precursors. The samples were characterized via Raman and photoluminescence (PL) spectroscopy and compared to mechanically exfoliated MoS2 crystal by measuring the full-width half maxima (FWHM) of monolayer and few-layer mesoscopic flakes. In addition, the CVD synthesized single and few-layered MoS2 domains were transferred to different substrates using a high yield process, including a flexible substrate, preserving the quality of the material. Finally, and mechanically exfoliated MoS2 two-terminal photodetector was designed, fabricated, and measured. Demonstrating thus the capability of heterostructure fabrication and the quality of our synthesis and device fabrication process.

Keywords

semiconductingRaman spectroscopyoptoelectronic

Information

Type
Articles
Information
MRS Advances , Volume 2 , Issue 60: Nanomaterials , 2017, pp. 3709 - 3714
Copyright
Copyright © Materials Research Society 2017 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

Novoselov, K. S., Fal’ko, V. I., Colombo, L., Gellert, P. R., Schwab, M. G., and Kim, K., “A roadmap for graphene.,” Nature, vol. 490, no. 7419, pp. 192–200, Oct. 2012.Google Scholar
Mak, K. F., Lee, C., Hone, J., Shan, J., and Heinz, T. F., “Atomically thin MoS2: A new direct-gap semiconductor,” Phys. Rev. Lett., vol. 105, no. 13, pp. 2–5, 2010.Google Scholar
Song, X., Zan, W., Xu, H., Ding, S., Zhou, P., Bao, W., and Zhang, D. W., “A novel synthesis method for large-area MoS2 film with improved electrical contact,” vol. 25051.Google Scholar
Shi, Y. M., Li, H. N., and Li, L. J., “Recent advances in controlled synthesis of two-dimensional transition metal dichalcogenides via vapour deposition techniques,” Chem. Soc. Rev., vol. 44, no. 9, pp. 2744–2756, 2015.Google Scholar
Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V., and Kis, A., “Single-layer MoS2 transistors.,” Nat. Nanotechnol., vol. 6, no. March, pp. 147–150, 2011.Google Scholar
Lee, C., Yan, H., Brus, L. E., Heinz, T. F., Hone, J., and Ryu, S., “Anomalous lattice vibrations of single- and few-layer MoS2,” ACS Nano, vol. 4, no. 5, pp. 2695–2700, 2010.CrossRefGoogle Scholar
Ramasubramaniam, A., Naveh, D., and Towe, E., “Tunable band gaps in bilayer transition-metal dichalcogenides,” Phys. Rev. B, vol. 84, no. 20, p. 205325, Nov. 2011.CrossRefGoogle Scholar
Lara Saenz, G. A., Biswas, C., Yamaguchi, H., Narvaez Villarrubia, C., Mohite, A. D., and Kaul, A. B., “Effects of Synthesis Parameters on CVD Molybdenum Disulfide Growth,” MRS Adv., vol. 1, no. 32, pp. 2291–2296, 2016.CrossRefGoogle Scholar
Li, H., Zhang, Q., Yap, C. C. R., Tay, B. K., Edwin, T. H. T., Olivier, A., and Baillargeat, D., “From Bulk to Monolayer MoS2: Evolution of Raman Scattering,” Adv. Funct. Mater., vol. 22, no. 7, pp. 1385–1390, Apr. 2012.Google Scholar
Yu, Y., Li, C., Liu, Y., Su, L., Zhang, Y., and Cao, L., “Controlled scalable synthesis of uniform, high-quality monolayer and few-layer MoS2 films.,” Sci. Rep., vol. 3, p. 1866, 2013.Google Scholar
McCreary, K. M., Hanbicki, A. T., Singh, S., Kawakami, R. K., Jernigan, G. G., Ishigami, M., Ng, A., Brintlinger, T. H., Stroud, R. M., and Jonker, B. T., “The Effect of Preparation Conditions on Raman and Photoluminescence of Monolayer WS2,” Sci. Rep., vol. 6, no. June, p. 35154, 2016.Google Scholar