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Using Pressure Effects to Create New Emergent Materials by Design

Published online by Cambridge University Press:  20 July 2017

C.Q. Jin*
Affiliation:
Institute of Physics, Chinese Academy of Sciences; School of Physics, University of Chinese Academy of Sciences, Beijing, China
*
*(Email: Jin@iphy.ac.cn)
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Abstract

New emergent materials of novel electromagnetic properties are discussed, based primarily on our recent works. The use of pressure effects in terms of self oxidization, inner compression and pure doping in discovering new emergent materials is highlighted. Materials addressed include (I) new correlated oxides such as high-T c cuprate superconductors; (II) new intermetallic materials such as diluted magnetic semiconductors with independent spin & charge doping; the “111” type iron based superconducting systems; (III) compounds with strong spin orbit coupling, such as itinerant ferromagnetic ruthenates etc.

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Copyright © Materials Research Society 2017 

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