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Electrical Spin Injection and Transport in Semiconductor Spintronic Devices

Published online by Cambridge University Press:  31 January 2011

B.T. Jonker,
S.C. Erwin,
A. Petrou and
A.G. Petukhov
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Abstract

Semiconductor heterostructures that utilize carrier spin as a new degree of freedom offer entirely new functionality and enhanced performance over conventional devices. We describe the essential requirements for implementing this technology, focusing on the materials and interface issues relevant to electrical spin injection into a semiconductor. These are discussed and illustrated in the context of several prototype semiconductor spintronic devices, including spin-polarized light-emitting diodes and resonant tunneling structures such as the resonant interband tunneling diode.

Keywords

ferromagnetic materialssemiconductorsspin injectionspin-polarized materialsspintronics

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Type
Research Article
Information
MRS Bulletin , Volume 28 , Issue 10: New Materials for Spintronics , October 2003, pp. 740 - 748
Copyright
Copyright © Materials Research Society 2003

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