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Germanium Nanostructures on Silicon Observed by Scanning Probe Microscopy

Published online by Cambridge University Press:  31 January 2011

Masahiko Tomitori and
Toyoko Arai
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Abstract

Scanning tunneling microscopy and noncontact atomic force microscopy have been used to observe germanium growth on Si(001) and Si(111). The atomically resolved images provide invaluable information on heteroepitaxial film growth from the viewpoints of both industrial application and basic science. We briefly review the history of characterizing heteroepitaxial elemental semiconductor systems by means of scanning probe microscopy (SPM), where the Stranski–Krastanov growth mode can be observed on the atomic scale:the detailed phase transition from layer-by-layer growth to three-dimensional cluster growth was elucidated by the use of SPM. In addition, we comment on the potential of SPM for examining the spectroscopic aspects of heteroepitaxial film growth, through the use of SPM tips with well-defined facets.

Keywords

AFMatomic force microscopycrystal growthelemental semiconductorsgermaniumnanostructuresscanning probe microscopyscanning tunneling microscopysiliconSPMSTM.

Information

Type
Research Article
Information
MRS Bulletin , Volume 29 , Issue 7: Scanning Probe Microscopy in Materials Science , July 2004, pp. 484 - 487
Copyright
Copyright © Materials Research Society 2004

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