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Intrinsic Point Defects and Their Control in Silicon Crystal Growth and Wafer Processing

Published online by Cambridge University Press:  31 January 2011

R. Falster and
V. V. Voronkov
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Extract

Silicon produced for the microelectronics industry is far and away the purest and most perfect crystalline material manufactured today. It is fabricated routinely and in very large volumes. Many of the advances in integrated-circuit (IC) manufacturing achieved in recent years would not have been possible without parallel advances in silicon-crystal quality and defect engineering. Transition-metal contamination is a case in point. Essentially all practical problems (minority carrier lifetime, metal precipitation, stacking faults, etc.) associated with metal contaminants have largely been solved through advances in crystal purity.

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Type
Research Article
Information
MRS Bulletin , Volume 25 , Issue 6: Defects and Diffusion in Silicon Processing , June 2000, pp. 28 - 32
Copyright
Copyright © Materials Research Society 2000

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