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Multiscale Modeling of Thin-Film Deposition: Applications to Si Device Processing

Published online by Cambridge University Press:  31 January 2011

F.H. Baumann,
D.L. Chopp,
T. Díaz de la Rubia,
G.H. Gilmer,
J.E. Greene,
H. Huang,
S. Kodambaka,
P. O'Sullivan and
I. Petrov
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Extract

Metallization is the back end of the integrated-circuit (IC) fabrication process where the transistor interconnections are formed. Figure 1 shows the metallized part of a static random-access memory chip. Metal lines for electrical connections (Al and Cu) in Si devices are deposited as blanket films and then etched or polished away to define the conducting lines.

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Type
Research Article
Information
MRS Bulletin , Volume 26 , Issue 3: Materials Research by Means of Multiscale Computer Simulation , March 2001, pp. 182 - 189
Copyright
Copyright © Materials Research Society 2001

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