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Nanocrystalline Silicon for Optoelectronic Applications

Published online by Cambridge University Press:  29 November 2013

Leonid Tsybeskov
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Light emission in silicon has been intensively investigated since the 1950s when crystalline silicon (c-Si) was recognized as the dominant material in microelectronics. Silicon is an indirect-bandgap semiconductor and momentum conservation requires phonon assistance in radiative electron-hole recombination (Figure 1a, top left). Because phonons carry a momentum and an energy, the typical signature of phonon-assisted recombination is several peaks in the photoluminescence (PL) spectra at low temperature. These PL peaks are called “phonon replicas.” High-purity c-Si PL is caused by free-exciton self-annihilation with the exciton binding energy of ~11 meV. The TO-phonon contribution in conservation processes is most significant, and the main PL peak (~1.1 eV) is shifted from the bandgap value (~1.17 eV) by ~70 meV—that is, the exciton binding energy plus TO-phonon energy (Figure 1a).

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Type
Silicon-Based Optoelectronics
Information
MRS Bulletin , Volume 23 , Issue 4 , April 1998, pp. 33 - 38
Copyright
Copyright © Materials Research Society 1998

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References

1.Haynes, H.R. and Briggs, H.B., Phys. Rev. 86 (1952) p. 647;Google Scholar
Haynes, H.R. and Westphal, W.C., Phys. Rev. 101 (1956) p. 1676.CrossRefGoogle Scholar
2.Vouk, M.A. and Lightowlers, E.C., J. Phys. C 10 (1977) p. 3689.Google Scholar
3.Yablonovitch, E., Altera, D.L., Chang, C.C., Gmitter, T., and Bright, T.B., Phys. Rev. Lett. 57 (1986) p. 249.CrossRefGoogle Scholar
4.Collins, R.T., Fauchet, P.M., and Tischler, M.A., Phys. Today 50 (1997) p. 24;CrossRefGoogle Scholar
Fauchet, P.M., in Light Emission in Silicon, edited by Lockwood, D.J., Semiconductors and Semimetals, vol. 49 (Academic Press, San Diego, CA, 1998) p. 206.Google Scholar
5.Canham, L.T., Appl. Phys. Lett. 57 (1990) p. 1046.CrossRefGoogle Scholar
6.Richter, A., Steiner, P., Kozlowski, F., and Lang, W., IEEE Electron Device Lett. 12 (1991) p. 691;CrossRefGoogle Scholar
Koshida, N. and Koyama, H., Appl. Phys. Lett. 60 (1992) p. 347;CrossRefGoogle Scholar
Bsiesy, A., Miller, F., Ligeon, M., Gaspard, F., Herino, R., Romenstain, R., and Vial, J.C., Phys. Rev. Lett. 71 (1993) p. 637.CrossRefGoogle Scholar
7.Tischler, M.A., Collins, R.T., Stathis, J.H., and Tsang, J.C., Appl. Phys. Lett. 60 (1992) p. 639.CrossRefGoogle Scholar
8. For example, see Light Emission From Silicon, edited by Iyer, S.S., Collins, R.T., and Canham, L.T. (Mater. Res. Soc. Symp. Proc. 256, Pittsburgh, 1992);Google Scholar
Microcrystalline Semiconductors: Materials Science and Devices, edited by Fauchet, P.M., Tsai, C.C., Canham, L.T., Shimizu, I., and Aoyagi, Y. (Mater. Res. Soc. Symp. Proc. 283, Pittsburgh, 1993);Google Scholar
Microcrystalline and Nanocrystalline Semiconductors, edited by Collins, R.W., Tsai, C.C., Hirose, M., Koch, F., and Brus, L. (Mater. Res. Soc. Symp. Proc. 358, Pittsburgh, 1995);Google Scholar
Advanced Luminescent Materials, edited by Lockwood, D.J., Fauchet, P.M., Koshida, N., and Brueck, S.R.J. (The Electrochemical Society, Pennington, NJ, 1996);Google Scholar
Advances in Microcrystalline and Nanocrystalline Semiconductors-1996, edited by Collins, R.W., Fauchet, P.M., Shimizu, I., Vial, J.C., Shimada, T., and Alivisatos, A.P. (Mater. Res. Soc. Symp. Proc. 452, Pittsburgh, 1997).Google Scholar
9. Very popular definition of porous silicon.Google Scholar
10.Loni, A., Simons, A.J., Cox, T.I., Calcott, P.D.J., and Canham, L.T., Electron. Lett. 31 (1995) p. 1288.CrossRefGoogle Scholar
11.Tsybeskov, L., Duttagupta, S.P., Hirschman, K.D., and Fauchet, P.M., Appl. Phys. Lett. 68 (1996) p. 2058.CrossRefGoogle Scholar
12.Hirschman, K.D., Tsybeskov, L., Duttagupta, S.P., and Fauchet, P.M., Nature 384 (1996) p. 338.CrossRefGoogle Scholar
13.Cullis, A.G. and Canham, L.T., Nature 353 (1991) p. 335.CrossRefGoogle Scholar
14.Proot, J.P., Delerue, C., and Allan, G., Appl. Phys. Lett. 61 (1992) p. 1948;CrossRefGoogle Scholar
Delerue, C., Allan, G., and Lannoo, M., Phys. Rev. B 48 (1993) p. 11024;CrossRefGoogle Scholar
Takagahara, T. and Takeda, K., Phys. Rev. 46 (1992) p. 15578;CrossRefGoogle Scholar
Zang, S.B. and Zunger, A., Appl. Phys. Lett. 63 (1993) p. 1399;CrossRefGoogle Scholar
Hybertsen, M.S., Phys. Rev. Lett. 72 (1994) p. 1514.CrossRefGoogle Scholar
15.Calcott, P.D.G., Nash, K.J., Canham, L.T., Kane, M.J., and Brumhead, D., J. Phys: Cond. Matter 5 (1993) p. L91;Google Scholar
J. Lumin. 57 (1993) p. 257.CrossRefGoogle Scholar
16.Kanemitsu, Y., in Light Emission in Silicon, edited by Lockwood, D.J., Semiconductors and Semimetals, vol. 49 (Academic Press, San Diego, CA, 1998) p. 157.Google Scholar
17.Brus, L.E., Szajowski, P.F., Wilson, W.L., Harris, T.D., Schuppler, S., and Citrin, P.H., J. Am. Chem. Soc. 117 (1995) p. 2915.CrossRefGoogle Scholar
18.Rosenbauer, M., Finkbeiner, S., Bustarret, E., Weber, J., and Stutzmann, M., Phys. Rev. B 51 (1995) p. 10539.CrossRefGoogle Scholar
19.Kovalev, D., Hecker, H., Averboukh, B., BenChorin, M., Schwartzkopff, M., and Koch, F., Phys. Rev. 57 (1998) p. 3741.CrossRefGoogle Scholar
20.Carlos, W.E. and Prokes, S.M., Appl. Phys. Lett. 65 (1994) p. 1245;CrossRefGoogle Scholar
Prokes, S.M. and Glembocki, O.J., Phys. Rev. B 49 (1994) p. 2238;CrossRefGoogle Scholar
Prokes, S.M., Carlos, W.E., and Glembocki, O.J., Phys. Rev. 50 (1994) p. 17093.CrossRefGoogle Scholar
21.Wilson, W.L., Szajowski, P.F., and Brus, L.E., Science 262 (1993) p. 1242.CrossRefGoogle Scholar
22.von Behren, J.et al., Solid State Communr 105 (1998) p. 317.CrossRefGoogle Scholar
23.Mizuno, H., Koyama, H., and Koshida, N., Appl. Phys. Lett. 69 (1996) p. 3779.CrossRefGoogle Scholar
24.Rao, P., Schiff, E.A., Tsybeskov, L., and Fauchet, P.M., in Advances in Microcrystalline and Nanocrystalline Semiconductors-1996, edited by Collins, R.W., Fauchet, P.M., Shimizu, I., Vial, J.C., Shimada, T., and Alivisatos, A.P. (Mater. Res. Soc. Symp. Proc. 452, Pittsburgh, 1997) p. 613.Google Scholar
25.Tsybeskov, L., Hirschman, K.D., Moore, L.F., Fauchet, P.M., and Calcott, P.D.G., Appl. Phys. Lett. 69 (1996) p. 687.CrossRefGoogle Scholar
26.Tsybeskov, L., Hirschman, K.D., Duttagupta, S.P., and Fauchet, P.M., Appl. Phys. Lett. 69 (1996) p. 681.CrossRefGoogle Scholar
27.Tsybeskov, L., Duttagupta, S.P., Hirschman, K.D., and Fauchet, P.M., in Advanced Luminescent Materials, edited by Lockwood, D.J., Fauchet, P.M., Koshida, N., and Brueck, S.R.J. (The Electrochemical Society, Pennington, NJ, 1996) p. 34.Google Scholar
28.Tsybeskov, L., Moore, K.L., Fauchet, P.M., and Hall, D.G., in Advances in Microcrystalline and Nanocrystalline Semiconductors-1996, edited by Collins, R.W., Fauchet, P.M., Shimizu, I., Vial, J.C., Shimada, T., and Alivisatos, A.P. (Mater. Res. Soc. Symp. Proc. 452, Pittsburgh, 1997) p. 523.Google Scholar
29.Duttagupta, S.P., Fauchet, P.M., Peng, C., Kurinec, S.K., Hirschman, K.D., and Blanton, T.N., in Microcrystalline and Nanocrystalline Semiconductors, edited by Collins, R.W., Tsai, C.C., Hirose, M., Koch, F., and Brus, L. (Mater. Res. Soc. Symp. Proc. 358, Pittsburgh, 1995) p. 647.Google Scholar
30.Frohnhoff, S. and Berger, M.G., Adv. Mater. 6 (1994) p. 963.CrossRefGoogle Scholar
31.Pellegrini, V., Tredicucci, A., Mazzoleni, C., and Pavesi, L., Phys. Rev. B 52 (1995) p. R14328;CrossRefGoogle Scholar
Pavesi, L., Mazzoleni, C., Tredicucci, A., and Pellegrini, V., Appl. Phys. Lett. 67 (1995) p. 3280.CrossRefGoogle Scholar
32.Tsybeskov, L., Hirschman, K.D., Duttagupta, S.P., Fauchet, P.M., Zacharias, M., Kohlert, P., McCoffrey, J.P., and Lockwood, D.J., in Proc. Quantum Confinement: Nanoscale Materials, Devices and Systems, edited by Cahay, M., Leburton, J.P., Lockwood, D.J., and S. Bandyopadhyay, , vol. 97–11 (The Electrochemical Society, Pennington, NJ, 1997) p. 134.Google Scholar
33.Tsybeskov, L., Hirschman, K.D., Duttagupta, S.P., Zacharias, M., Fauchet, P.M., McCoffrey, J.P., and Lockwood, D.J., Appl. Phys. Lett. 72 (1) (1998) p. 43.CrossRefGoogle Scholar
34.Bergh, A.A. and Dean, P.J., Light-Emitting Diodes (Clarendon Press, Oxford, 1976) p. 591.Google Scholar
35.Brown, T.G. and Hall, D.G., in Light Emission in Silicon: From Physics to Devices, edited by Lockwood, D.J., Semiconductors and Semimetals, vol. 49 (Academic Press, San Diego, 1998) p. 78.Google Scholar
36.Canham, L.T., MRS Bulletin XVIII (7) (1993) p. 22.CrossRefGoogle Scholar