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Quantum-Dot Vertical-Cavity Surface-Emitting Lasers

Published online by Cambridge University Press:  31 January 2011

D. Bimberg ,
N.N. Ledentsov  and
J.A. Lott
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Abstract

GaAs-based continuous-wave quantum-dot vertical-cavity surface-emitting lasers (VCSELs) operating at 1.3 μm at 20°C with output power of 1.2 mW have been realized. Threshold currents approach 1–1.5 mA for 8-μm oxide apertures. Operating voltages are ∼2 V. Long operation lifetimes in excess of 5000 h at 50°C without degradation have been achieved. This article describes these breakthroughs, which are based on our development of complex self-organized growth technologies for defect-free stacked quantum dots.

Keywords

chemical vapor deposition (CVD)compound semiconductorscrystal growthcrystal structureelectrical propertiesmolecular-beam epitaxy (MBE)optoelectronic materialsoptical propertiesphotoluminescencequantum dots (QDs)transmission electron microscopy (TEM)vertical-cavity surface-emitting lasers (VCSELs).

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Type
Research Article
Information
MRS Bulletin , Volume 27 , Issue 7: Vertical-Cavity Surface-Emitting Lasers , July 2002 , pp. 531 - 537
Copyright
Copyright © Materials Research Society 2002

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References

1. For a review, see Bimberg, D., Grundmann, M., and Ledentsov, N.N., Quantum Dot Heterostruc-tures (John Wiley & Sons, Chichester, 1999).Google Scholar
2.Ledentsov, N.N., Grundmann, M., Kirstaedter, N., Schmidt, O., Heitz, R., Böhrer, J., Bimberg, D., Ustinov, V.M., Shchukin, V.A., Kop'ev, P.S., Alferov, Zh.I., Ruvimov, S.S., Kosogov, A.O., Werner, P., Richter, U., Gösele, U., and Heydenreich, J., Solid-State Electron. 40 (1996) p. 785.CrossRefGoogle Scholar
3.Shchukin, V.A. and Bimberg, D., Rev. Mod. Phys. 71 (1999) p. 1125.CrossRefGoogle Scholar
4.Bimberg, D., Heinrichsdorff, F., Ledentsov, N.N., and Shchukin, V.A., Appl. Surf. Sci. 159–160 (2000) p. 1.CrossRefGoogle Scholar
5.Ledentsov, N.N., Grundmann, M., Heinrichsdorff, F., Bimberg, D., Ustinov, V.M., Zhukov, A.E., Maximov, M.V., Alferov, Zh.I., and Lott, J.A., IEEE J. Sel. Top. Quantum Electron. 6 (2000) p. 439.CrossRefGoogle Scholar
6.Ledentsov, N.N., Ustinov, V.M., Egorov, A.Yu., Zhukov, A.E., Maximov, M.V., Tabatadze, I.G., and Kop'ev, P.S., Semiconductors 28 (1994) p. 832;Google Scholar
Kirstaedter, N., Ledentsov, N.N., Grundmann, M., Bimberg, D., Ustinov, V.M., Ruvimov, S.S., Maximov, M.V., Kop'ev, P.S., Alferov, Zh.I., Richter, U., Werner, P., Gösele, U., and Heydenreich, J., Electron. Lett. 30 (1994) p. 1416.CrossRefGoogle Scholar
7.Basov, N.G., Krokhin, O.N., and Popov, Yu.M., JETP Lett. 40 (1961) p. 1320.Google Scholar
8.Soda, H., Iga, K., Kitahara, C., and Suematsu, Y., Jpn. J. Appl. Phys. 18 (1979) p. 2329.CrossRefGoogle Scholar
9.Burnham, R.D., Scifres, D.R., and Streifer, W., U.S. Patent No. 4,309,670 (1982).Google Scholar
10.Dingle, R. and Henry, C.H., U.S. Patent No. 3,982,207 (1976).Google Scholar
11.Arakawa, Y. and Sakaki, H., Appl. Phys. Lett. 40 (1982) p. 939.CrossRefGoogle Scholar
12.Arakawa, Y. and Yariv, A., IEEE J. Quantum Electron. QE–22 (1986) p. 1987.Google Scholar
13.Asada, M., Miyamoto, Y., and Suematsu, Y., IEEE J. Quantum Electron. QE–22 (1986) p. 1915.CrossRefGoogle Scholar
14.Grundmann, M. and Bimberg, D., Jpn. J. Appl. Phys. 36 (1997) p. 4181.CrossRefGoogle Scholar
15.Stier, O., Grundmann, M., and Bimberg, D., Phys. Rev. B 59 (1999) p. 5688.CrossRefGoogle Scholar
16.Zunger, A., MRS Bull. 23 (2) (1998) p. 35.CrossRefGoogle Scholar
17.Asryan, L.V., Grundmann, M., Ledentsov, N.N., Stier, O., Suris, R.A., and Bimberg, D., IEEE J. Quantum Electron. 37 (2001) p. 418.CrossRefGoogle Scholar
18.Asryan, L.V., Grundmann, M., Ledentsov, N.N., Stier, O., Suris, R.A., and Bimberg, D., J. Appl. Phys. 90 (2001) p. 1666.CrossRefGoogle Scholar
19.Kovsh, A.R., Zhukov, A.E., Maleev, N.A., Ustinov, V.M., Maximov, M.V., Mikhrin, S.S., Shernyakov, Yu.M., Ledentsov, N.N., and Bimberg, D., to be presented at 26th Intl. Conf. on the Physics of Semiconductors 2002, Edinburgh, July 29–August 2, 2002.Google Scholar
20.Ribbat, C., Sellin, R., Grundmann, M., Bimberg, D., Sobolev, N.A., and Carmo, M.C., Electron. Lett. 37 (2001) p. 174.CrossRefGoogle Scholar
21.Tomm, J., Sellin, R., Ribbat, C., and Bimberg, D. (unpublished).Google Scholar
22.Goldstein, L., Glas, F., Marzin, J.Y., Charasse, M.N., and Leroux, G., Appl. Phys. Lett. 47 (1985) p. 1099.CrossRefGoogle Scholar
23.Glas, F., Guille, C., Hénoc, P., and Houzay, F., in Proc. Microscopy of Semiconducting Materials Conf., Inst. Phys. Conf. Ser. 87, edited by Cullis, A.G. and Augustus, P.D. (Institute of Physics, Bristol, 1987) p. 71.Google Scholar
24.Tabuchi, M., Noda, S., and Sasaki, A., in Science and Technology of Mesoscopic Structures, edited by Namba, S., Hamaguchi, C., and Ando, T. (Springer-Verlag, Tokyo, 1992) p. 379.CrossRefGoogle Scholar
25.Moison, J.M., Houzay, F., Barthe, F., Leprice, L., Andre, E., and Vatel, O., Appl. Phys. Lett. 64 (1994) p. 196.CrossRefGoogle Scholar
26.Leonard, D., Krishnamurthy, M., Reaves, C.M., Denbaars, S.P., and Petroff, P.M., Appl. Phys. Lett. 63 (1993) p. 3203.CrossRefGoogle Scholar
27.Shchukin, V.A., Ledentsov, N.N., Kop'ev, P.S., and Bimberg, D., Phys. Rev. Lett. 75 (1995) p. 2968.CrossRefGoogle Scholar
28.Ledentsov, N.N., Shchukin, V.A., Grundmann, M., Kirstaedter, N., Böhrer, J., Schmidt, O., Bimberg, D., Zaitsev, S.V., Ustinov, V.M., Zhukov, A.E., Kop'ev, P.S., Alferov, Zh.I., Kosogov, A.O., Ruvimov, S.S., Werner, P., Gösele, U., and Heydenreich, J., Phys. Rev. B 54 (1996) p. 8743.CrossRefGoogle Scholar
29.Shernyakov, Yu.M., Bedarev, D.A., Kondrat'eva, E.Yu., Kop'ev, P.S., Kovsh, A.R., Maleev, N.A., Maximov, M.V., Ustinov, V.M., Volovik, B.V., Zhukov, A.E., Alferov, Zh.I., Ledentsov, N.N., and Bimberg, D., Electron. Lett. 35 (1999) p. 898.CrossRefGoogle Scholar
30.Sellin, R., Ribbat, Ch., Grundmann, M., Ledentsov, N.N., and Bimberg, D., Appl. Phys. Lett. 78 (2001) p. 1207.CrossRefGoogle Scholar
31.Maximov, M.V., Tsatsul'nikov, A.F., Volovik, B.V., Sizov, D.S., Shernyakov, Yu.M., Kaiander, I.N., Zhukov, A.E., Kovsh, A.R., Mikhrin, S.S., Ustinov, V.M., Alferov, Zh.I., Heitz, R., Shchukin, V.A., Ledentsov, N.N., Bimberg, D., Musikhin, Yu.G., and Neumann, W., Phys. Rev. B 62 (2000) p. 16671.CrossRefGoogle Scholar
32.Kovsh, A.R., Zhukov, A.E., Lifshits, D.A., Egorov, A.Yu., Ustinov, V.M., Maximov, M.V., Musikhin, Yu.G., Ledentsov, N.N., Kop'ev, P.S., Alferov, Zh.I., and Bimberg, D., Electron. Lett. 35 (1999) p. 1161.CrossRefGoogle Scholar
33.Ledentsov, N.N., Maximov, M.V., Bimberg, D., Maka, T., Sotomayor Torres, C.M., Kochnev, I.V., Krestnikov, I.L., Lantratov, V.M., Cherkashin, N.A., Musikhin, Yu.M., and Alferov, Zh.I., Semicond. Sci. Technol. 15 (2000) p. 604.CrossRefGoogle Scholar
34.Bimberg, D., Grundmann, M., Ledentsov, N.N., Mao, M.H., Ribbat, Ch., Sellin, R., Ustinov, V.M., Zhukov, A.E., Alferov, Zh.I., and Lott, J.A., Phys. Status Solidi B 224 (2001) p. 787.3.0.CO;2-M>CrossRefGoogle Scholar
35.Shernyakov, Yu.M., Ustinov, V.M., Kovsh, A.R., Zhukov, A.E., Maleev, N.A., Maximov, M.V., Ledentsov, N.N., and Bimberg, D. (unpublished).Google Scholar
36.Ribbat, Ch., Sellin, R., and Bimberg, D. (unpublished).Google Scholar
37.Ustinov, V.M., Zhukov, A.E., Maleev, N.A., Kovsh, A.R., Mikhrin, S.S., Volovik, B.V., Cherkashin, N.A., Shernyakov, Yu.M., Maximov, M.V., Tsatsul'nikov, A.F., Ledentsov, N.N., Lott, J.A., Bimberg, D., and Alferov, Zh.I., in Proc. SPIE Symp. on Physics and Simulation of Optoelectronic Devices X (SPIE—The International Society for Optical Engineering, Bellingham, WA, 2001) Paper No. 4646–05.Google Scholar
38.Deppe, D.G., Shchekin, O.B., Mo, Q., Cao, C., Zou, Z., and Chen, H., in Proc. SPIE Symp. on Vertical-Cavity Surface-Emitting Lasers VI (SPIE—The International Society for Optical Engineering, Bellingham, WA, 2001) Paper No. 4649–14.Google Scholar
39.Schur, R., Sogawa, F., Nishioka, M., Ishida, S., and Arakawa, Y., Jpn. J. Appl. Phys., Part 2: Lett. 35 (1997) p. L357.CrossRefGoogle Scholar
40.Saito, H., Nishi, K., Ogura, I., Sugou, S., and Sugimoto, Y., Appl. Phys. Lett. 69 (1996) p. 3140.CrossRefGoogle Scholar
41.Lott, J.A., Ledentsov, N.N., Ustinov, V.M., Egorov, A.Yu., Zhukov, A.E., Kop'ev, P.S., Alferov, Zh.I., and Bimberg, D., Electron. Lett. 33 (1997) p. 1150.CrossRefGoogle Scholar
42.Ledentsov, N.N., Bimberg, D., Ustinov, V.M., Maximov, M.V., Alferov, Zh.I., Kalosha, V.P., and Lott, J.A., Semicond. Sci. Technol. 13 (1999) p. 99.CrossRefGoogle Scholar
43.Huffaker, D.L., Park, G., Zou, Z., Shchekin, O.B., and Deppe, D.G., Appl. Phys. Lett. 73 (1998) p. 2564.CrossRefGoogle Scholar
44.Day, J.F., “The Future of Laser Diode Appli-cations,“ Materials of the Laser Marketplace Seminar [CD-ROM] (PennWell, Nashua, NH, 2000).Google Scholar
45.Lott, J.A., Ledentsov, N.N., Ustinov, V.M., Maleev, N.A., Zhukov, A.E., Kovsh, A.R., Maximov, M.V., Volovik, B.V., Alferov, Zh.I., and Bimberg, D., Electron. Lett. 36 (2000) p. 1384.CrossRefGoogle Scholar
46.Ledentsov, N.N., Bimberg, D., Ustinov, V.M., Lott, J.A., and Alferov, Zh.I., Memoirs of the Institute of Scientific and Industrial Research, Vol. 57 (March 2001), special issue “Advanced Nano-electronics: Devices, Materials, and Computing,” 3rd Sanken International Symposium (ISIR, Osaka, 2000) p. 80.Google Scholar
47.Lott, J.A., Ledentsov, N.N., Ustinov, V.M., and Bimberg, D., in Digest of the LEOS Summer Topical Meeting (Institute of Electrical and Electronics Engineers, Piscataway, NJ, 2001) Paper MA2–3, p. 17.Google Scholar
48.Choquette, K.D., Klem, J.F., Fischer, A.J., Blum, O., Allerman, A.A., Fritz, I.J., Kurtz, S.R., Breiland, W.G., Sieg, R., Geib, K.M., Scott, J.W., and Naone, R.L., Electron. Lett. 36 (2000) p. 1388.CrossRefGoogle Scholar
49.Steinle, G., Reichert, H., and Egorov, A.Yu., Electron. Lett. 37 (2001) p. 93.CrossRefGoogle Scholar
50.Volovik, B.V., Sizov, D.S., Tsatsul'nikov, A.F., Musikhin, Yu.G., Ledentsov, N.N., Ustinov, V.M., Egorov, V.A., Petrov, V.N., Polyakov, N.K., and Tsyrlin, G.É., Semiconductors 34 (2000) p. 1316.CrossRefGoogle Scholar
51.Vorob'ev, L.E., Firsov, D.A., Shalygin, V.A., Tulupenko, V.N., Shernyakov, Yu.M., Ledentsov, N.N., Ustinov, V.M., and Alferov, Zh.I., JETP Lett. 67 (1998) p. 275.CrossRefGoogle Scholar
52.Petroff, P.M., Lorke, A., and Imamoglu, A., Phys. Today 54 (2001) p. 46.CrossRefGoogle Scholar