Hostname: page-component-74656f9884-8r8nv Total loading time: 0 Render date: 2026-11-10T05:38:09.792Z Has data issue: false hasContentIssue false
  • English
  • Français

Silicon-Based Microphotonics and Integrated Optoelectronics

Published online by Cambridge University Press:  29 November 2013

E.A. Fitzgerald  and
L.C. Kimerling
Get access

Extract

The need for integrated optical interconnects in electronic systems is derivedfrom the cost and performance of electronic systems. If we examine the cost of all interconnects, it becomes apparent that there is an exponential growth in cost per interconnect with the length of the interconnect. A remarkable feature of interconnect cost is that the exponential relation holds over all length scales—from the shortest interconnects on a chip to the longest interconnects in global telecommunications networks. Longer interconnects are drastically more expensive, and these costs are ultimately related to the labor cost associated with each interconnect. Given this economic pressure, it is not surprising that there is a driving force to condense more functions locally on the same chip, board, or system. In condensing these functions, the number of long interconnects are decreased and the overall cost of the electronic system decreases dramatically. A specific glaring example of this driving force is Si complementary-metal-oxide-semiconductor (CMOS) technology, especially the case of microprocessors. In the Si microprocessor case, the flood gates to interconnect condensation were opened and the miraculous trend of lower cost for exponentially increasing performance was revealed.

Information

Type
Silicon-Based Optoelectronics
Information
MRS Bulletin , Volume 23 , Issue 4 , April 1998 , pp. 39 - 47
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1.Warwick, C.A., Yan, R-H., Kim, Y.O., and Ourmazd, A., “Toward Giga-Scale Silicon Integrated Circuits,” AT&T Tech. J. 72 (1993) p. 50.Google Scholar
2.Proc. Semiconductor Industry Assoc. Workshop (Semiconductor Industry Assoc., 1993).Google Scholar
3.Solomon, P.M., “A Comparison of Semiconductor Devices for High-Speed Logic,” Proc. IEEE 70 (1982) p. 489.CrossRefGoogle Scholar
4.Sakurai, T., “Approximation of Wiring Delay in MOSFET LSI,” IEEE J. Solid-State Circuits SC18 (1983) p. 418.CrossRefGoogle Scholar
5.Fitzgerald, E.A., presented at Electronic Materials Conference, Boulder, CO, June 1994.Google Scholar
6.Yassievich, I.N. and Kimerling, L.C., “The Mechanisms of Electronic Excitation of Rare Earth Impurities in Semiconductors,” Semicond. Sci. Technol. 7 (1993) p. 1.Google Scholar
7.Michel, J., Assali, L.V.C., Morse, M.T., and Kimerling, L.C., “Erbium in Silicon,” Semicond. Semimetals 49 (1998) p. 111.CrossRefGoogle Scholar
8.Palm, J., Can, F., Zheng, B., Michel, J., and Kimerling, L.C., “Electroluminescence of Erbium-Doped Silicon,” Phys. Rev. B 54 (1996) p. 603.CrossRefGoogle ScholarPubMed
9.Miniscalco, W.J., “Erbium-Doped Glasses for Fiber Amplifiers at 1500 nm,” J. Lightwave Technol. 9 (1991) p. 234.CrossRefGoogle Scholar
10.Gan, F., Assali, L.V.C., and Kimerling, L.C., “Electronic Structure of Erbium Centers in Silicon,” Mater. Sci. Forum 197 (1995) p. 579.CrossRefGoogle Scholar
11.Ahn, S.H., Palm, J., Zheng, B., Duan, X., Agarwal, A., Nelson, S.F., Michel, J., and Kimerling, L.C., “Electrical Study of Crystalline Silicon Coimplanted With Erbium and Oxygen,” SPIE 3007 (1997) p. 144.Google Scholar
12.Palm, J., Gan, F., Zheng, B., Michel, J., and Kimerling, L.C., “On the Electroluminescence of Erbium Doped Silicon,” Phys. Rev. B 54 (1996) p. 17603.CrossRefGoogle ScholarPubMed
13.Zheng, B., Michel, J., Ren, F.Y.G., Jacobson, D.C., Poate, J.M., and Kimerling, L.C., “Room Temperature Sharp Line Electroluminescence, λ = 1.54 μm From an Erbium-Doped, Silicon Light-Emitting Diode,” Appl. Phys. Lett. 64 (1994) p. 2842.CrossRefGoogle Scholar
14.Michel, J., Zheng, B., Palm, J., Ouellette, E., Gan, F., and Kimerling, L.C., in Defects in Electronic Materials II, edited by Michel, J., Kennedy, T., Wada, K., and Thonke, K. (Mater. Res. Soc. Symp. Proc. 442, Pittsburgh, 1996) p. 317.Google Scholar
15.Fitzgerald, E.A., Yie, Y-H., Green, M.L., Brasen, D., Kortan, A.R., Michel, J., Mii, Y.J., and Weir, B.E., “Totally Relaxed GexSi1−x Layers With Low Threading Dislocation Densities,” Appl. Phys. Lett. 59 (1991) p. 811.CrossRefGoogle Scholar
16.Fitzgerald, E.A., Xie, Y-H., Monroe, D., Silverman, P.J., Kuo, J-M., Kortan, A.R., Thiel, F.A., Weir, B.E., and Feldman, L.C., “Relaxed GexSi1−x, Structures for III-V Integration With Si and High Mobility Two-Dimensional Electron Gases in Si,” J. Vac. Sci. Technol. B 10 (1992) p. 1807.CrossRefGoogle Scholar
17.Currie, M.T., Samavedam, S.B., Langdo, T.A., Leitz, C.W., and Fitzgerald, E.A., Appl. Phys. Lett. in press.Google Scholar
18.Fitzgerald, E.A., Kuo, J-M., Xie, Y-H., and Silverman, P.J., “The Necessity of Ga Pre-layers in GaAs/Ge Growth Using GSMBE,” Appl. Phys. Lett. 64 (1994) p. 733.CrossRefGoogle Scholar
19.Sieg, R.M., Ringel, S.A., Ting, S.M., and Fitzgerald, E.A., “Antiphase Domain-Free Growth of Ga As on Off-Cut 001 Ge Substrates by MBE With Suppressed Ge Out-Diffusion” (unpublished manuscript).Google Scholar
20.Ting, M., Sieg, R., Ringel, S., and Fitzgerald, E.A., J. Electron. Mater. in press.Google Scholar
21.Fitzgerald, E.A., “The Effect of Substrate Growth Area on Misfit and Threading Dislocation Densities in Mismatched Heterostruc-tures,” J. Vac. Sci. Technol. B 7 (1989) p. 782.CrossRefGoogle Scholar
22.Lim, D.R., thesis, S.B., 1994.Google Scholar
23.Weiss, B.L., Reed, G.T., Toh, S.K., Soref, R.A., and Namavar, F., “Optical Waveguides in SIMOX Structures,” IEEE Photonics Technol. Lett. 3 (1991) p. 19.CrossRefGoogle Scholar
24.Schmidten, J., Splett, A., Schuppert, B., Petermann, K., and Burbach, G., “Low Loss Single Mode Optical Waveguides With Large Cross-Section in Silicon on Insulator,” Electron. Lett. 27 (1991) p. 1486.CrossRefGoogle Scholar
25.Emmons, R.M., Kurdi, B.N., and Hall, D.G., “Buried-Oxide Silicon on Insulator Structure I. Optical Waveguide Characteristics,” IEEE J. Quantum Electron. 28 (1992) p. 1486.Google Scholar
26.Rickman, A., Reed, G.T., Weiss, B.L., and Namavar, F., “Low Loss Planar Optical Waveguides Fabricated in SIMOX Material,” IEEE Photonics Tech. Lett. 4 (1992) p. 633.CrossRefGoogle Scholar
27.Foresi, J.S., Lim, D.R., Agarwal, A.M., and Kimerling, L.C., “Small Radius Bends and Large Angle Splitters in SOI Waveguides,” SPIE 3007 (1997) p. 112.Google Scholar
28.Foresi, J.S., Villeneuve, P.R., Ferrera, J., Theon, E.R., Steinmeyer, G., Fan, S., Joannopoulos, J.D., Kimerling, L.C., Smith, H.I., and Ippen, E.P., “Photonic-Bandgap Microcavities in Optical Waveguides,” Nature 390 (1997) p. 143.CrossRefGoogle Scholar
29.Fitzgerald, E.A. and Samavedam, S.B., “Line, Point, and Surface Defect Morphology of Graded, Relaxed GeSi Alloys on Si Substrates,” Thin Solid Films 294 (1997) p. 3.CrossRefGoogle Scholar
30.Watson, G.P., Fitzgerald, E.A., Jalali, B., Xie, Y-H., and Weir, B.E., “Relaxed, Low Threading Defect Density Sio 7Geo 3 Epitaxial Layers Grown on Si by Rapid Thermal Chemical Vapor Deposition,” J. Appl. Phys. 75 (1994) p. 263.CrossRefGoogle Scholar
31.Samavedam, S.B. and Fitzgerald, E.A., “Novel Dislocation Structure and Surface Morphology Effects in Relaxed Ge/Si-Ge(Graded)/Si Structures,” J. Appl. Phys. 81 (1997) p. 3108.CrossRefGoogle Scholar
32.Fitzgerald, E.A., Samavedam, S., Xie, Y-H., and Giovane, L.M., “Influence of Strain on Semiconductor Thin Film Epitaxy,” J. Vac. Sci. Technol. A 15 1048 (1997) p. 1048.CrossRefGoogle Scholar