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Total Ionizing Dose and Displacement-Damage Effects in Microelectronics

Published online by Cambridge University Press:  31 January 2011

Charles C. Foster
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Abstract

When exposed to radiation, the function of microelectronic devices is not only degraded by single-event phenomena but by cumulative effects. Most of the energy lost by radiation passing through semiconductors is through ionization. Buildup of charge in gate oxide layers and of interface and border traps due to ionization result in semipermanent damage to the device. These effects are known as total ionizing dose effects. A fraction of the energy of the radiation passing through semiconductors is lost to displacement of atoms from their sites in the crystal lattice structure. The buildup of displacement damage with radiation exposure causes gradual but permanent changes in device performance and limits device lifetime in a radiation environment. Displacement damage will be discussed in the context of non-ionizing energy loss.

Keywords

displacement damageelectrical propertiesmicroelectronicsnon-ionizing energy loss (NIEL)radiation effectssemiconductorssoft errorstotal ionizing dose (TID) effects

Information

Type
Research Article
Information
MRS Bulletin , Volume 28 , Issue 2: Single-Event Upsets in Microelectronics , February 2003 , pp. 136 - 140
Copyright
Copyright © Materials Research Society 2003

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