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Two-Dimensional Electron Gases at Oxide Interfaces

Published online by Cambridge University Press:  31 January 2011

J. Mannhart,
D.H.A. Blank,
H.Y. Hwang,
A.J. Millis and
J.-M. Triscone
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Abstract

Two-dimensional electron gases (2DEGs) based on conventional semiconductors such as Si or GaAs have played a pivotal role in fundamental science and technology. The high mobilities achieved in 2DEGs enabled the discovery of the integer and fractional quantum Hall effects and are exploited in high-electron-mobility transistors. Recent work has shown that 2DEGs can also exist at oxide interfaces. These electron gases typically result from reconstruction of the complex electronic structure of the oxides, so that the electronic behavior of the interfaces can differ from the behavior of the bulk. Reports on magnetism and superconductivity in oxide 2DEGs illustrate their capability to encompass phenomena not shown by interfaces in conventional semiconductors. This article reviews the status and prospects of oxide 2DEGs.

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Type
Research Article
Information
MRS Bulletin , Volume 33 , Issue 11: Whither Oxide Electronics? , November 2008, pp. 1027 - 1034
Copyright
Copyright © Materials Research Society 2008

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